Media coverage
The Centre for GaN Materials and Devices has internationally recognised expertise in the field of III-nitride semiconductor materials and devices, demonstrated by a strong publication record, frequent citations, and highlights in major semiconductor magazines.
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Recent press
- 15th June 2022, Semiconductor Today
"" - 6th January 2022, The Engineer
"​â¶Ä‹â¶Ä‹â¶Ä‹â¶Ä‹" - 5th January 2022, Compound Semiconductor
"" - 4th January, Semiconductor Today
"" - 4th January, The University of Sheffield
"" - 27th December 2021, UKRI ¾Ã²Ý¸£Àû
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Featured in:
Press archive
- 14 May 2021, Compound Semiconductor:
"" - 3 July 2020, Compound Semiconductor:
"" - 12 March 2020, Compound Semiconductor:
"" - 6 February 2020, Materials World:
"" - 4 February 2020, The University of Sheffield:
"" - 3 February 2020, LED Inside:
"" - 3 February 2020, Semiconductor Today:
"" - 31 January 2020, Electronicsweekly.com:
"" - 31 January 2020, Compound Semiconductor:
"" - 5 December 2016, EPSRC ¾Ã²Ý¸£Àû:
"" - 29 July 2016, ChinaDaily Europe:
"" - 22 January 2016, ee¾Ã²Ý¸£Àû Europe:
"" - 23 October 2015, the University of Sheffield:
"" - 29 May 2015, Semiconductor Today:
"" - 9 March 2015, LEDinside:
"" - 25 May 2012, Semiconductor Today:
"" - 9 May 2012, the University of Sheffield:
"" - 8 March 2012, Semiconductor Today:
"" - 26 February 2010, Compound Semiconductor:
"" - 25 February 2010, The Engineer:
"" - 10 February 2010, Semiconductor Today:
"" - 10 February 2010, Compound Semiconductor:
"" - 26 November 2007, The Engineer:
"" - November 2004, III-Vs Review Magazine:
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