Professor Shankar Madathil

PhD, MTech, MSc, BSc

School of Electrical and Electronic Engineering

Chair in Power Electronic Systems

Electrical Machines and Drives Research Group

Rolls-Royce/Royal Academy of Engineering Research Chair

Headshot of Shankar Madathil
Profile picture of Headshot of Shankar Madathil
s.madathil@sheffield.ac.uk
+44 114 222 5856
Sir Frederick Mappin Building

Full contact details

Professor Shankar Madathil
School of Electrical and Electronic Engineering
Sir Frederick Mappin Building
Mappin Street
Sheffield
S1 3JD
Profile

Prof Shankar N Ekkanath Madathil was a Royal Academy of Engineering Research Professor in Power Electronics (2007-12) and a Royal Society Industry Fellow of Rolls-Royce (2013-17).

Between 1994 and 2007, he was the Founding Director of the Emerging Technologies Research Centre at De Montfort University, which he established to undertake research in microelectronics.

Prior to that, he was elected as a Maudslay Engineering Research Fellow of Pembroke College, Cambridge.

He completed his PhD in Cambridge University through support from Cambridge Nehru scholarship and has a Master’s degree in Semiconductor Technology and a Master’s degree in Materials Science.

He has more than three decades of proven track record in the field of power semiconductor devices and associated technologies and works with key supply chain partners world-wide.

His group has already delivered world-leading innovative power semiconductor device solutions in Silicon (Si) and wide band gap materials such as Gallium Nitride (GaN) and Silicon Carbide (SiC).

His notable contributions include the Clustered IGBT concept in Silicon and Silicon Carbide; the first demonstration of 3 kV Intelligent Power Chip in Silicon, record low on-state resistance 100 V devices in Silicon, world first demonstration of high density 2 Dimensional Hole Gas in GaN and most recently, ground-breaking super-junction switching technologies in GaN. As PI/Co-I, he has successfully led projects to transfer innovative power device technologies to industry.

He was an invited Fellow at the National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan in 2005 & 2007. He is a Visiting Professor and Vajra Faculty in IIT Bombay, India.

Most recently, he has been offered short-term Invitation Fellowship by Japanese Society of Promotion of Sciences to spend two months at Kyushu University in Japan.

He is an editor of IEEE – Transactions in Electron Devices, IEEE - Transactions in Devices and Materials Reliability, Proceedings of the Royal Society – Mathematical, Physical and Engineering Sciences and an associated editor of IET – Journal of Power Electronics.

He is a Fellow of IET and IOP. Presently, he is involved as a Technical Program Committee member in various IEEE and premier conferences such as IEDM and ESSDERC/ESSIRC.

Qualifications
  • PhD (Engineering), University of Cambridge 1992
  • MTech (Physical Engineering), Indian Institute of Science, Bangalore 1986
  • MSc (Applied Sciences), PSG College of Technology, India 1984
  • BSc (Applied Sciences), PSG College of Technology, India 1982
Research interests
  • Power semiconductor devices and technologies
  • High temperature power electronics
  • Active gate drive technologies
  • High power density converters
  • Power integrated circuits for lighting, automotive and switched mode power supplies
  • High voltage thin film transistors and integration aspects
  • Modelling of power semiconductor devices and technologies
  • New concepts for semiconductor devices and technologies
  • Power semiconductor devices and technologies for harsh environments
  • Wide band gap power semiconductor devices and technologies
  • Nano technologies for power electronic applications
Publications

Journal articles

  • Sheikhan A, Narayanan EMS, Kawai H, Yagi S & Narui H (2025) . Electronics, 14(3).
  • Sheikhan A & Narayanan EMS (2024) . Micromachines, 15(11).
  • Du Y, Sankara Narayanan EM, Kawai H, Yagi S & Narui H (2024) . physica status solidi (a), 221(21).
  • Du Y, Madathil SNE, Kawai H, Yagi S & Narui H (2024) . physica status solidi (a), 221(4).
  • Sheikhan A, Madathil SNE, Kawai H, Yagi S & Narui H (2023) . Japanese Journal of Applied Physics, 62.
  • Sheikhan A, Narayanankutty G, Narayanan EMS, Kawai H, Yagi S & Narui H (2023) . Japanese Journal of Applied Physics, 62(3), 039401-039401.
  • Sheikhan A, Narayanankutty G, Madathil S, Kawai H, Yagi S & Narui H (2023) . Japanese Journal of Applied Physics, 62(1).
  • Du Y, Yan H, Luo P, Tan X, Madathil S, Kawai H, Yagi S & Narui H (2023) . IEEE Transactions on Electron Devices, 70(1), 178-184.
  • Luo P, Madathil S, Saito W & Nishizawa S-I (2022) . Japanese Journal of Applied Physics, 61(SC).
  • Yan H, Du Y, Luo P, Tan X & Madathil S (2021) . IEEE Transactions on Electron Devices, 68(11), 5714-5719.
  • Tan Q, Narayanankutty G & Madathil EMS (2021) . IET Power Electronics, 14(14), 2305-2313.
  • Tan QY & Narayanan EMS (2021) . Bulletin of the Polish Academy of Sciences : Technical Sciences, 69(2).
  • Wang Z & Madathil S (2021) . IET Power Electronics, 14(6), 1111-1120.
  • Luo P, Madathil S, Nishizawa S-I & Saito W (2021) . IEEE Transactions on Power Electronics, 36(3), 3304-3311.
  • Luo P & Madathil SNE (2020) . IEEE Transactions on Electron Devices, 67(12), 5621-5627.
  • Luo P & Madathil SNE (2020) . IEEE Transactions on Electron Devices, 67(12), 5613-5620.
  • Luo P, Madathil S, Nishizawa S & Saito W (2020) . IEEE Transactions on Electron Devices, 67(9), 3691-3697.
  • Kaminski N & Madathil SE (2019) . IET Power Electronics, 12(15), 3859-3860.
  • Luo P, Long HY & Madathil SN (2018) . IEEE Electron Device Letters, 39(9), 1350-1353.
  • Unni V, Long HY, Yan H, Nakajima A, Kawai H & Narayanan EMS (2018) . IET Power Electronics, 11(14), 2198-2203.
  • Luo P, Long HY, Sweet MR, De Souza M & Madathil SNE (2018) . IEEE Transactions on Electron Devices, 65(4), 1440-1446.
  • (2018) . IET Power Electronics, 11(4), 627-628.
  • Amano H, Baines Y, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R, De Santi C , De Souza MM et al (2018) . Journal of Physics D: Applied Physics, 51.
  • H Amano and Y Baines and E Beam and Matteo Borga and T Bouchet a (2018) The 2018 GaN power electronics roadmap. Journal of Physics D: Applied Physics, 51(16), 163001.
  • Luo P, Sweet M & Ekkanath Madathil S (2017) . IET Power Electronics.
  • Kawai H, Yagi S, Hirata S, Nakamura F, Saito T, Kamiyama M, Yamamoto M, Amano H, Unni V & Narayanan EMS (2017) . Physica Status Solidi (a), 214(8).
  • 昭 中, 伸一 西, 弘通 大, 一生 筒, 洋 岩, 邦之 角, 整 若, Vineet U & Narayanan EMS (2016) , 199-199.
  • Baltynov T, Unni V & Narayanan EMS (2016) . Solid-State Electronics, 125, 111-117.
  • Long H, Sweet M & Narayanan S (2016) . Facta universitatis - series: Electronics and Energetics, 29(1), 1-10.
  • Zhu H, Sweet M & Sankara Narayanan EM (2015) . IET Power Electronics, 8(12), 2429-2434.
  • Madathil SE (2015) . IET Power Electronics, 8(12), 2307-2307.
  • Unni V, Kawai H & Narayanan EMS (2015) . Electronics Letters, 51(1), 108-110.
  • Unni V, Kawai H & Narayanan EMS (2014) . Microelectronics Reliability, 54(9-10), 2242-2247.
  • Balakrishnan M, Sweet MR & Narayanan EMS (2013) . IECON Proceedings Industrial Electronics Conference, 544-548.
  • Menon KG & Narayanan EMS (2012) . IEEE Transactions on Electron Devices.
  • Long HY, Sweet MR & Narayanan EMS (2012) . IEEE Transactions on Electron Devices, 59(12), 3464-3469.
  • Luther-King N, Sweet M & Narayanan EMS (2012) . Ieee Transactions on Power Electronics, 27, 3072-3080.
  • Menon KG, Ngwendson L, Nakajima A, Sankara Narayanan EM & Bruce GP (2012) . Materials Science Forum, 717-720, 1139-1142.
  • Long HY, Luther-King N, Sweet MR & Narayanan EMS (2012) . IEEE Transactions on Power Electronics, 27(5), 2673-2679.
  • Balachandran A, Sweet MR, Luther-King N, Narayanan EMS, Ray S, Quaresma H & Bruce J (2012) . IEEE Transactions on Electron Devices, 59(5), 1439-1444.
  • NAKAJIMA A, SUMIDA Y, YAGI S, KAWAI H, DHYANI MH & NARAYANAN EMS (2011) GaN power devices using the polarization junction concept. 電気学会研究会資料. SPC, 半導体電力変換研究会, 2011(142), 1-6.
  • NAKAJIMA A, SUMIDA Y, YAGI S, KAWAI H, DHYANI MH & NARAYANAN EMS (2011) GaN power devices using the polarization junction concept. 電気学会研究会資料. EDD, 電子デバイス研究会, 2011(50), 1-6.
  • Menon KG, Nakajima A, Ngwendson L & Narayanan EMS (2011) . IEEE ELECTR DEVICE L, 32(9), 1272-1274.
  • Nakajima A, Sumida Y, Dhyani MH, Kawai H & Narayanan EM (2011) . IEEE Electron Device Letters, 32(4), 542-544.
  • Luther-King N, Sankara Narayanan EM, Coulbeck L, Crane A & Dudley R (2010) . Speedam 2010 International Symposium on Power Electronics Electrical Drives Automation and Motion, 545-550.
  • Nakajima A, Sumida Y, Dhyani MH, Kawai H & Narayanan EMS (2010) . Applied Physics Express, 3(12).
  • Luther-King N, Narayanan EMS, Coulbeck L, Crane A & Dudley R (2010) . IEEE Transactions on Power Electronics, 25(3), 583-591.
  • Long H, Sweet MR, Ngwendson LK & Narayanan EMS (2010) . Japanese Journal of Applied Physics, 49(4 PART 2).
  • Vershinin K, Moens P, Bauwens F, Narayanan EMS & Tack M (2009) . IEEE Electron Device Letters, 30(4), 416-418.
  • Kong ST, Ngwendson LK, Sweet M, Kumar D & Sankara Narayanan EM (2009) . IEEE Transactions on Power Electronics, 24(4), 1100-1106.
  • Green DW, Vershinin KV, Sweet M & Narayanan EMS (2007) . IEEE Transactions on Power Electronics, 22(5), 1857-1866.
  • Nicholls JC, Sweet MR, Vershinin KV & Narayanan EMS (2007) . IEEE Transactions on Power Electronics, 22(4), 1177-1185.
  • Green DW & Sankara Narayanan EM (2006) Fully isolated high side and low side LIGBTs in junction isolation technology. Proceedings of the International Symposium on Power Semiconductor Devices and Ics, 2006.
  • Tadikonda R, Hardikar S, Green DW, Sweet M & Narayanan EMS (2006) . IEEE Transactions on Electron Devices, 53(7), 1740-1744.
  • Hardikar S, Green DW & Narayanan EMS (2006) . IEEE Transactions on Electron Devices, 53(6), 1487-1490.
  • Hardikar S, Nicholls J, Green DW, Sweet M & Sankara Narayanan EM (2006) . IEE Proceedings Circuits Devices and Systems, 153(1), 67-72.
  • Green DW, Sweet M, Vershinin KV, Hardikar S & Narayanan EMS (2005) . IEEE Transactions on Electron Devices, 52(11), 2482-2488.
  • Moguilnaia NA, Vershinin KV, Sweet MR, Spulber OI, De Souza MM & Narayanan EMS (2005) . IEEE Transactions on Engineering Management, 52(4), 429-439.
  • Luther-King N, Sweet M, Spulber O, Vershinin KV, De Souza MM & Narayanan EMS (2005) . IEEE Transactions on Electron Devices, 52(9), 2075-2080.
  • Cross RBM, De Souza MM & Sankara Narayanan EM (2005) . Nanotechnology, 16(10), 2188-2192.
  • Green DW, Hardikar S, Tadikonda R, Sweet M, Vershinin KV & Narayanan EMS (2005) . IEEE Transactions on Electron Devices, 52(7), 1672-1676.
  • Cross RBM, Oxley DP, Manhas M & Sankara Narayanan EM (2004) . Materials Research Society Symposium Proceedings, 808, 697-702.
  • Hardikar S, Tadikonda R, Green DW, Vershinin KV & Narayanan EMS (2004) . IEEE Transactions on Electron Devices, 51(12), 2223-2228.
  • Tadikonda R, Hardikar S & Narayanan EMS (2004) . Solid State Electronics, 48(9), 1655-1660.
  • Cao G, Manhas SK, Narayanan EMS, De Souza MM & Hinchley D (2004) . IEEE Transactions on Electron Devices, 51(8), 1296-1303.
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM, Sankara-Narayanan EM, Flores D & Millan J (2004) . IEE Proceedings Circuits Devices and Systems, 151(3), 265-268.
  • Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2004) . IEE Proceedings Circuits Devices and Systems, 151(3), 203-206.
  • Benda V & Narayanan EMS (2004) . Microelectron. J., 35, 223-223.
  • Hardikar S, De Souza MM, Xu YZ, Pease TJ & Sankara Narayanan EM (2004) . Microelectronics Journal, 35(3), 305-310.
  • Sankara Narayanan EM, Spulber O, Sweet M, Bose JVSC, Verchinine K, Luther-King N, Moguilnaia N & De Souza MM (2004) . Microelectronics Journal, 35(3), 235-248.
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2004) . Solid State Electronics, 48(12), 2207-2211.
  • Coconete DE, Moguilnaia NA, Cross RBM, De Souza PE & Sankara Narayanan EM (2003) Creativity - A Catalyst for Technological Innovation. IEEE International Engineering Management Conference, 291-295.
  • Hardikar S, Tadikonda R, Sweet M, Vershinin K & Narayanan EMS (2003) . IEEE Electron Device Letters, 24(11), 701-703.
  • Luo J, Cao G, Ekkanath Madathil SN & De Souza MM (2003) . Solid State Electronics, 47(11), 1937-1941.
  • Udrea F, Udugampola UNK, Sheng K, McMahon RA, Amaratunga GAJ, Narayanan EMS, De Souza MM & Hardikar S (2002) . IEEE Electron Device Letters, 23(12), 725-727.
  • Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Sankara Narayanan EM (2002) . Solid State Electronics, 46(6), 903-909.
  • Xu YZ, Cross R, Manhas M, Clough FJ, Desouza MM, Narayanan EMS, Flores D, Rebello J, Vellvehi M & Millan J (2002) . Applied Physics Letters, 80(12), 2192-2194.
  • Chichkine MP, De Souza MM & Sankara Narayanan EM (2002) . Phys Rev Lett, 88(8), 085501.
  • Roig J, Vellvehi M, Flores D, Rebollo J, Millan J, Krishnan S, De Souza MM & Sankara Narayanan EM (2002) . Solid State Electronics, 46(2), 255-261.
  • De Souza MM, Chichkine MP & Sankara Narayanan EM (2001) . Physica B Condensed Matter, 304(1-4), 483-488.
  • Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2001) . Solid State Electronics, 45(7), 1055-1058.
  • Sweet M, Ngw CK, Spulber O, Ngwendson JVL, Vershinin KV, Bose SC, De Souza MM & Narayanan EMS (2001) . Microelectronics Journal, 32(5-6), 527-536.
  • Krishnan S, De Souza MM, Narayanan EMS, Vellvehi M, Roig J, Flores D, Rebollo J & Millan J (2001) . Microelectronics Journal, 32(5-6), 481-484.
  • Bose JVSC, De Souza MM, Narayanan EMS, Ensell G, Pease TJ & Humphery J (2001) . Microelectronics Journal, 32(4), 323-326.
  • Luther-King N, Sweet M, Spulber O, Vershinin K, Ngw CK, Bose SC, De Souza MM & Sankara Narayanan EM (2001) . Solid-State Electronics, 45(1), 71-77.
  • Souza MMD, Wang J, Manhas SK, Narayanan EMS & Oates AS (2001) . Microelectron. Reliab., 41, 169-177.
  • Hardikar S, Xu YZ, Cao GJ, De Souza MM & Sankara Narayanan EM (2001) . Microelectronics Journal, 32(2), 121-126.
  • Ngw CK, Sweet M, Subhas Chandra Bose JV, Spulber O, Luther King N, Vershinin K, De Souza MM & Sankara Narayanan EM (2001) . Solid State Electronics, 45(1), 127-132.
  • Spulber O, Sweet M, Vershinin K, Ngw CK, Ngwendson L, Bose JVSC, De Souza MM & Narayanan EMS (2000) A novel trench clustered insulated gate bipolar transistor (TCIGBT). IEEE ELECTR DEVICE L, 21(12), 613-615.
  • Cao GJ, De Souza MM & Narayanan EMS (2000) . Solid State Electronics, 44(10), 1869-1873.
  • Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2000) . Electronics Letters, 36(18), 1587-1589.
  • De Souza MM, Subhas Chandra Bose JV, Sankara Narayanan EM, Pease TJ, Ensell G & Humphreys J (2000) . Solid-State Electronics, 44(8), 1381-1386.
  • Krishnan S, De Souza MM, Sankara Narayanan EM, Vellvehi M, Flores D, Rebollo J & Millan J (2000) . Electronics Letters, 36(14), 1242-1244.
  • Hardikar S, Cao G, Xu Y, De Souza MM & Narayanan EMS (2000) . Solid State Electronics, 44(7), 1213-1218.
  • Qin Z, Sankara Narayanan EM & De Souza MM (2000) . Microelectronics Journal, 31(3), 175-185.
  • Pease TJ, Ekkanath-Madathil SN & Bayliss SC (2000) . Journal of Electronic Materials, 29(8), 1033-1037.
  • Spulber O, Sankara Narayanan EM, Hardikar S, De Souza MM, Sweet M & Subhas Chandra Bose JV (1999) . IEEE Electron Device Letters, 20(11), 580-582.
  • Xu YZ, Hardikar S, De Souza MM, Cao GJ & Narayanan EMS (1999) . Electronics Letters, 35(21), 1880-1881.
  • De Souza MM, Ngw CK, Shishkin M & Narayanan EMS (1999) . Physical Review Letters, 83(9), 1799-1801.
  • Xu YZ, Clough FJ, Narayanan EMS, Chen Y & Milne WI (1999) . IEEE Electron Device Letters, 20(2), 80-82.
  • Qin Z & Sankara Narayanan EM (1999) . International Journal of Electronics, 86(10), 1169-1178.
  • Qin Z, Narayanan EMS & De Souza MM (1999) . Solid-State Electronics, 43(10), 1845-1853.
  • De Souza MM & Sankara Narayanan EM (1998) Self-diffusion in silicon. Defect and Diffusion Forum, 153-155, 69-80.
  • Clough FJ, Sankara Narayanan EM, Chen Y, Eccleston W & Milne WI (1997) . Applied Physics Letters, 71(14), 2002-2004.
  • Ekkanath-Madathil SN, De Souza MM & Qin Z (1997) . Solid State Phenomena, 55, 51-53.
  • De Souza MM & Sankara Narayanan EM (1996) . Electronics Letters, 32(12), 1092-1093.
  • Clough FJ, Brown AO, Madathil SNE & Milne WI (1995) . Thin Solid Films, 270(1-2), 517-521.
  • Qin & Sankara Narayanan EM (1995) . Electronics Letters, 31(23), 2045-2047.
  • Clough FJ, Brown AO, Ekkanath Madathil SN & Milne WI (1995) . Microelectronic Engineering, 28(1-4), 451-454.
  • Chen W, Amaratunga GAJ, Narayanan EMS, Humphrey J & Evans AGR (1994) . IEEE Electron Device Letters, 15(11), 482-484.
  • Sankara Narayanan EM, Amaratunga GAJ & Milne WI (1993) . IEEE Transactions on Electron Devices, 40(10), 1880-1883.
  • Huang Q, Amaratunga GAJ, Humphrey J, Narayanan EMS, Milne WI & Starbuck CM (1992) . IEEE Electron Device Letters, 13(11), 575-577.
  • Narayanan EMS, Amaratunga GAJ, Milne WI, Humphrey JI & Huang Q (1991) . IEEE Transactions on Electron Devices, 38(7), 1624-1632.
  • Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1991) . IEEE Transactions on Electron Devices, 38(7), 1612-1618.
  • Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1991) . Solid State Electronics, 34(9), 983-993.
  • Huang Q, Amaratunga GAJ, Narayanan EMS & Milne WI (1990) . IEEE Journal of Solid-State Circuits, 25(2), 613-616.
  • Zuxin Qin & Sankara Narayanan EM () . 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299), 1047-1050.

Conference proceedings

  • Sheikhan A & Narayanan EMS (2025) . 2025 17th International Seminar on Power Semiconductors (ISPS) (pp 1-4), 27 August 2025 - 29 August 2025.
  • Sheikhan A & Sankara Narayanan EM (2025) . Pcim Europe Conference Proceedings (pp 179-184)
  • Sheikhan A, Narayanan EMS, Kawai H, Yagi S & Narui H (2024) . PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings (pp 549-556). Nürnberg, Germany, 11 June 2024 - 11 June 2024.
  • Sheikhan A & Sankara Narayanan EM (2024) . PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp 2601-2606). Nürnberg, Germany, 11 June 2024 - 11 June 2024.
  • Narayanan EMS (2023) . ISPS'23 Proceedings (pp 24-27)
  • Tan X & Narayanan EMS (2023) . ISPS'23 Proceedings (pp 137-143)
  • Sheikhan A & Narayanan EMS (2023) . ISPS'23 Proceedings (pp 55-61)
  • Wang Z & Sankara Narayanan EM (2021) . IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society (pp 1-6), 13 October 2021 - 16 October 2021.
  • Madathil SNE, Luo P, Saito W & Nishizawa S (2021) . Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials, 6 September 2021 - 9 September 2021.
  • Luo P, Madathil SNE & de Souza P (2021) . Proceedings of 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) (pp 1319-1324). Singapore, Singapore, 24 May 2021 - 27 May 2021.
  • Tan Q & Madathil S (2021) . 2020 8th International Conference on Power Electronics Systems and Applications (PESA). Hong Kong, China, 7 December 2020 - 7 December 2020.
  • Yan H & Narayanan EMS (2021) . ISPS'21 Proceedings (pp 113-115)
  • Luo P, Madathil SNE, Nishizawa S-I & Saito W (2020) . 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). Vienne, Austria, 13 September 2020 - 18 September 2020.
  • Luo P, Ekkanath Madathil SN, Nishizawa S & Saito W (2020) . Proceedings of 2019 IEEE International Electron Devices Meeting (IEDM) (pp 12.3.1-12.3.4). San Francisco, CA, USA, 7 December 2019 - 7 December 2019.
  • (2020) . 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13 September 2020 - 18 September 2020.
  • Luo P, Ekkanath Madathil SN, Nishizawa SI & Saito W (2020) High dV/dt controllability of 1.2kV TCIGBT through dynamic avalanche elimination. Pcim Asia 2020 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management Proceedings (pp 176-180)
  • Alwash M, Sweet M & Narayanan EMS (2017) . Electric Machines and Drives Conference (IEMDC), 2017 IEEE International (pp 1801-1806). Miami, FL, 21 May 2017 - 21 May 2017.
  • Alwash M, Sweet M & Narayanan EMS (2017) . 2017 IEEE International Electric Machines and Drives Conference (IEMDC) (pp 1-7), 21 May 2017 - 24 May 2017.
  • Luo P, Long HY, Sweet MR, De Souza MM & Narayanan EMS (2017) . Industrial Electronics (ISIE), 2017 IEEE 26th International Symposium on (pp 612-615). Edinburgh, UK, 19 June 2017 - 19 June 2017.
  • Long HY, Sweet MR, Narayanan EMS & Li G (2017) Reliability Study and Modelling of IGBT Press-Pack Power Modules. 2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) (pp 2711-2717)
  • Unni V & Narayanan EMS (2017) . Japanese Journal of Applied Physics, Vol. 56(4S), 26 September 2016 - 29 September 2016.
  • Sweet MR, Narayanan EMS & Menon K (2016) Impact of Poly-Crystalline Diamond within Power Semiconductor Device Modules in a Converter. 2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE)
  • Sweet M, Sankara Narayanan EM & Steinhoff S (2016) . 8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) (pp 6 .-6 .)
  • Alwash M, Sweet M, Madathil E, Narayanan S & Bruce G (2016) . 2016 IEEE Energy Conversion Congress and Exposition (ECCE) (pp 1-6), 18 September 2016 - 22 September 2016.
  • Baltynov T, Unni V & Narayanan EMS (2015) . 2015 45th European Solid State Device Research Conference (ESSDERC) (pp 126-129), 14 September 2015 - 18 September 2015.
  • Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) . 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (pp 33-36), 10 May 2015 - 14 May 2015.
  • Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) . 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 1266-1269), 15 March 2015 - 19 March 2015.
  • Unni V, Long H, Sweet M, Balachandran A, Narayanan EMS, Nakajima A & Kawai H (2014) . 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (pp 245-248), 15 June 2014 - 19 June 2014.
  • Narayanan EMS & Amaratunga G (2014) A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid-State Device Research Conference (pp 521-524)
  • Balakrishnan M, Sweet MR & Narayanan EMS (2014) . 2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (pp 128-132), 18 June 2014 - 20 June 2014.
  • Balachandran A, Sweet M, Ngwendson L, Sankara Narayanan EM, Ray S, Quaresma H & Bruce J (2012) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 169-172)
  • Nakajima A, Unni V, Menon KG, Dhyani MH, Sankara Narayanan EM, Sumida Y & Kawai H (2012) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 265-268)
  • Luther-King N, Sweet M & Narayanan EMS (2011) Evaluation of 1.2kV Super Junction Trench-Gate Clustered Insulated Gate Bipolar Transistor (SJ-TCIGBT). 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 92-95)
  • Nakajima A, Dhyani MH, Narayanan EMS, Sumida Y & Kawai H (2011) GaN Based Super HFETs over 700V Using the Polarization Junction Concept. 2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) (pp 280-283)
  • Ngwendson L, Sweet MR & Narayanan EMS (2009) . Proceedings of the IEEE Bipolar Bicmos Circuits and Technology Meeting (pp 198-205)
  • Dhyani MH, Green D, Sweet M, Narayanan EMS, Deane SC & Young ND (2009) . Technical Digest International Electron Devices Meeting Iedm (pp 8.7.4)
  • Luther-King N, Sweet M & Sankara Narayanan EM (2009) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 164-167)
  • Sweet M, Narayanan EMS, Vershinin K, Yip LJ, Moens P & Desoete B (2009) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 235-238)
  • Kong ST, Ngwendson L, Sweet M & Narayanan EMS (2008) An Analysis on Turn-off Behaviour of 1.2kV NPT-CIGBT under Clamped Inductive Load Switching. 2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5 (pp 43-47)
  • Sweet M, Luther-King N, Kong ST, Sankara Narayanan EM, Bruce J & Ray S (2008) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 48-51)
  • Kong ST, Ngwendson L, Sweet M & Sankara Narayanan EM (2008) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 177-180)
  • Moens P, Bauwens F, Desoete B, Baele J, Vershinin K, Ziad H, Narayanan EMS & Tack M (2008) . 2008 20th International Symposium on Power Semiconductor Devices and IC's (pp 1-3), 18 May 2008 - 22 May 2008.
  • Moens P, Bauwens F, Desoete B, Baele J, Vershinin K, Ziad H, Shankara Narayanan EM & Tack M (2007) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 57-60)
  • Narayanan EMS, Ramakrishna T & Green DW (2007) . Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 245-248)
  • Kumar D, Sweet M, Vershinin K, Ngwendson L & Narayanan EMS (2007) RC-TCIGBT: A reverse conducting trench clustered IGBT. PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (pp 161-164)
  • Vershinin K, Sweet M, Ngwendson L & Narayanan EMS (2006) Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology. 2006 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION, VOLS 1-3 (pp 275-278)
  • Moens P, Bauwens F, Baele J, Vershinin K, De Backer E, Narayanan EMS & Tack M (2006) . Technical Digest International Electron Devices Meeting Iedm
  • Vershinin K, Sweet M, Ngwendson L, Thomson J, Waind P, Bruce J & Narayanan EMS (2006) Experimental demonstration of a 1.2kV trench clustered insulated gate bipolar transistor in non punch through technology. PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 185-188)
  • Green DW, Hardikar S, Sweet M, Vershinin KV & Narayanan EMS (2005) Interaction between monolithically integrated JI-LIGBTs under clamped inductive switching. Proceedings of the International Symposium on Power Semiconductor Devices and Ics (pp 119-122)
  • Sweet MR, Nicholls J, Vershinin KV, Spulber O, Ngwendson L & Narayanan EMS (2005) Zero voltage switching of a 1200V PT clustered insulated gate bipolar transistor. PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 263-266)
  • Coconete DE, Moguilnaia NA & Narayanan EMS (2004) Technology strategy - A powerful instrument to generate and sustain competitive advantage in power microelectronics. IEEE International Engineering Management Conference, Vol. 1 (pp 358-362)
  • Tadikonda R, Hardikar S & Narayanan EMS (2004) Potential of high-k dielectrics for lateral power and high voltage devices. Proceedings of the International Conference on Microelectronics, Vol. 24 I (pp 129-132)
  • Green , Hardikar , Sweet , Vershinin , Tadikonda , De Souza & Narayanan (2004) . Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's (pp 285-287), 27 May 2004 - 27 May 2004.
  • Vershinin K, Sweet M, Spulber O, Hardikar S, Luther-King N, De Souza MM, Sverdloff S, Narayanan EMS & Hinchley D (2004) . IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD, Vol. 16 (pp 269-272)
  • Cao G, Narayanan EMS, De Souza MM, Flores D, Vellvehi M, Hidalgo S, Millan J & Hinchley D (2004) . IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD, Vol. 16 (pp 241-244)
  • Moguilnaia N, Coconete D & Sankara Narayanan EM (2003) Human Aspect of Rapid Product Commercialization in Power Microelectronics. IEEE International Engineering Management Conference (pp 247-251)
  • Spulber O, Sweet M, Vershinin K, Luther-King N, Sankara-Narayanan EM, De Souza MM, Flores D & Millan J (2003) 1.7kV NPT V-groove clustered IGBT - Fabrication and experimental demonstration. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 345-348)
  • Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Narayanan EMS (2003) Anode-gated MOS controlled thyristor with ultra-fast switching capability. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 299-302)
  • Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2003) Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 216-219)
  • Manhas M, Pease TJ, Cross R, Bose SC, Oxley DP, De Souza MM & Sankara Narayanan EM (2002) . Materials Research Society Symposium Proceedings, Vol. 716 (pp 317-323)
  • Luo J, Cao G, Spulber O, Hardikar S, Feng YM, Narayanan EMS & De Souza MM (2002) Influence of physical parameters on the quasi-saturation of a power SOI RF LDMOS. IEEE International Conference on Semiconductor Electronics Proceedings ICSE (pp 314-318)
  • De Souza MM, Cao G, Sankara Narayanan EM, Youming F, Manhas SK, Luo J & Moguilnaia N (2002) . ICCDCS 2002 4th IEEE International Caracas Conference on Devices Circuits and Systems
  • Hardikar S, De Souza MM & Sankara Narayanan EM (2002) Advances in devices and technologies for power and high voltage integrated circuits. Proceedings of SPIE the International Society for Optical Engineering, Vol. 4746 I (pp 422-431)
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Sankara-Narayanan EM (2002) Overview of trench gated MOS-Controlled bipolar semiconductor power devices. Proceedings of SPIE the International Society for Optical Engineering, Vol. 4746 I (pp 444-449)
  • Udugampola UNK, Khoo GFW, Sheng K, McMahon RA, Udrea F, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2002) . IEE Conference Publication(487) (pp 557-561)
  • Moguilnaia NA, Vershinin KV, Sweet MR, Hardikar S, Ngwendson LK, Spulber O, Rouse MJ, De Souza MM & Narayanan EMS (2002) The investigation into the recent mergers and acquisitions in power semiconductor industry. IEEE International Engineering Management Conference, Vol. 2 (pp 826-830)
  • Spulber O, De Souza MM, Sweet M, Subhas Chandra Bose JV & Sankara Narayanan EM (2001) . IEE Proceedings - Circuits, Devices and Systems, Vol. 148(2) (pp 79-79)
  • Sweet M, Spulber O, Bose JVSC, Ngwendson L, Vershinin KV, De Souza MM & Narayanan EMS (2001) Clustered insulated gate bipolar transistor: a new power semiconductor device. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 75-78)
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2001) A novel, 1.2 kV trench clustered IGBT with ultra high performance. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 323-326)
  • De Souza MM, Chichkine MP & Narayanan EMS (2000) Self-interstitial clusters in silicon. Materials Research Society Symposium Proceedings, Vol. 610 (pp B11.3.5)
  • Xu YZ, Clough FJ, Narayanan EMS & Cross R (2000) . Materials Research Society Symposium Proceedings, Vol. 609 (pp A2841-A2846)
  • Bose JVSC, De Souza MM, Sweet M, Spulber O & Narayanan EMS (2000) Novel area efficient edge termination technique for planar, MOS controlled power devices. Proceedings of SPIE the International Society for Optical Engineering, Vol. 3975
  • Krishnan S, De Souza MM, Sankara Narayanan EM, Vellvehí M, Flores D, Rebollo J & Millán J (2000) The radial confinement: A new approach to high voltage lateral power devices. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 349-352)
  • Sankara Narayanan EM, Sweet MR, Luther-King N, Vershinin K, Spulber O, De Souza MM & Subhas Chandra Bose JV (2000) A novel, clustered insulated gate bipolar transistor for high power applications. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 173-181)
  • Cao GJ, De Souza MM & Narayanan EMS (2000) Resurfed lateral bipolar transistors for high-voltage, High-frequency applications. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 185-187)
  • Spulber O, Sweet M, Vershinin K, Ngw Y, Ngwendson L, Bose SCJV, De Souza MM & Narayanan EMS (2000) Influence of the N plus floating emitter on the on-state characteristics of the trench EST. 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS (pp 329-332)
  • Narayanan EMS, Sweet M, Spulber O, De Souza MM & Bose SC (2000) Clustered IGBT - a new power semiconductor device. Proceedings of SPIE the International Society for Optical Engineering, Vol. 3975
  • Clough FJ, Xu YZ, Narayanan EMS & Cross R (1999) . Materials Research Society Symposium Proceedings, Vol. 557 (pp 635-640)
  • Spulber O, Narayanan EMS, De Souza MM, Sweet M, Hardikar S & Subhas Chandra Bose JV (1999) The trench planar insulated gate bipolar transistor (TPIGBT). IEE Colloquium Digest(104) (pp 75-79)
  • Aschenbeck J, Chen Y, Clough F, Xu YZ, Narayanan EMS & Milne WI (1998) . MRS Proceedings, Vol. 507
  • Aschenbeck J, Chen Y, Clough F, Xu YZ, Sankara Narayanan EM & Milne WI (1998) . MRS Proceedings, Vol. 508
  • Chen Y, Clough FJ, Sankara Narayanan EM, Xu YZ, Eccleston W & Milne WI (1997) . MRS Proceedings, Vol. 467
  • Clough FJ, Chen Y, Brown AO, Sankara Narayanan EM & Milne WI (1995) . MRS Proceedings, Vol. 377
  • Narayanan EMS, Clough FJ & Milne WI (1995) (pp 605-608)
  • Narayanan EMS & Amaratunga G (1995) A study of fast switching, anode shorted lateral insulated gate bipolar transistor. European Solid State Device Research Conference (pp 521-524)
  • Chen Y, Ekkanath Madathil SN, Clough FJ & Milne WI (1995) Influence of lattice temperature on SOI MOSFET's output characteristics. IEE Colloquium Digest(64) (pp 8/4)
  • Luo P, Madathil SNE, Nishizawa S-I & Saito W () . Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 686-689). New Orleans, LA, USA, 15 March 2020 - 15 March 2020.
  • Long H, Sweet M, De Souza MM & Madathil () A New Generation of Clustered IGBT with High Ruggedness. PCIM. Shanghai, 25 June 2015 - 25 June 2015.
  • Vershinin K, Sweet M, Ngwendson L, Thomson J, Waind P, Bruce J & Sankara Narayanan EM () . 2006 IEEE International Symposium on Power Semiconductor Devices & IC's (pp 1-4)
  • Green DW & Sankara Narayanan EM () . 2006 IEEE International Symposium on Power Semiconductor Devices & IC's (pp 1-4)
  • D. W. Green SH () . Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. (pp 119-122)
  • Sheng K, Udugampola UNK, Khoo GFW, Udrea F, Amaratunga GAJ, McMahon RA, Narayanan EMS, De Souza MM & Hardikar S () . Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics (pp 37-37)
  • Mugnier M, Manhas SK, Chandra Sekhar D, Krishnan S, Cross R, Sankara Narayanan EM, De Souza MM, Flores D, Vellvehi M & Millan J () . Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) (pp 219-222)
  • Krishnan S, Sankara Narayanan EM, Xu YZ, Clough FJ, De Souza MM, Flores D, Vellvehi M & Millan J () . 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), Vol. 1 (pp 155-158)
  • Sankara Narayanan EM, Moguilnaia N, Vershinin K, Sweet M, Hardikar S, Ngwendson L, Spulber O & De Souza MM () . 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), Vol. 1 (pp 7-13)
  • Sweet M, Spulber O, Ngwendson L, Vershinin KV, De Souza MM & Sankara Narayanan EM () . 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595), Vol. 1 (pp 151-154)
  • De Souza MM, Spulber O & Sankara Narayanan EM () . 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) (pp 313-316)
  • Manhas SK, de Souza MM, Gates AS, Chetlur SC & Sankara Narayanan EM () . 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) (pp 108-111)
  • Cao G, De Souza MM & Narayanan EMS () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 123-125)
  • Spuiber O, De Souza MM, Narayanan EMS & Krishnan S () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 131-134)
  • Bose JVSC, De Souza MM, Narayanan EMS, Spulber O & Sweet M () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 63-66)
  • Spulber O, Narayanan EMS, De Souza MM, Sweet M, Bose JVSC & Hardikar JV () . CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389), Vol. 1 (pp 51-54)
  • Hardikar S, Sankara Narayanan EM, De Souza MM, Huang AQ & Amaratunga G () . 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) (pp 261-264)
  • Xu YZ, Clough FJ, Narayanan EMS, Chen Y & Milne WI () . International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (pp 273-276)
  • Sankara Narayanan EM, Qin Z, De Souza MM & Amaratunga G () . Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) (pp 221-224)
  • Clough FJ, Chen Y, Narayanan EMS, Eccleston W & Milne WI () . Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's (pp 321-324)
  • Zuxin Qin & Narayanan EMS () . Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's (pp 313-316)
  • Zuxin Qin & Narayanan EMS () . Proceedings of Second International Conference on Power Electronics and Drive Systems, Vol. 1 (pp 72-77)
  • Narayanan EMS & Amaratunga G () . Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 (pp 218-223)
  • Narayanan EMS, Amaratunga G & Milne WI () . [1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs (pp 113-118)
  • Narayanan EMS, Amaratunga G & Milne WI () . Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics (pp 172-175)
  • Sankara Narayanan EM, Amaratunga GAJ, Milne WI & Huang Q () . [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs (pp 103-108)
  • Sankara Narayanan EM, Amaratunga GAJ, Milne WI & Huang Q () . [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs (pp 181-186)
  • Huang Q, Sankara Narayanan EM, Kwan KW, Amaratunga G & Milne WI () . Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90. (pp 102-107)
  • Madathil SN () International Symposium on Power Semiconductors & ICs. International Symposium on Power Semiconductors and ICs

Preprints

  • Sheikhan A & Ekkanath Madathil SN (2024) , MDPI AG.
Professional activities and memberships
  • Rolls-Royce/Royal Academy of Engineering Research Chair

Links

Electrical Machines and Drives Group