Professor Merlyne De Souza

School of Electrical and Electronic Engineering

Chair in Micro Electronics

Headshot of Merlyne de Souza
Profile picture of Headshot of Merlyne de Souza
m.desouza@sheffield.ac.uk
+44 114 222 5167

Full contact details

Professor Merlyne De Souza
School of Electrical and Electronic Engineering
Profile

I graduated with a BSc in Physics and Mathematics (1985) from the University of Mumbai, a BE. in Electronics and Communications Engineering (1988) from the Indian Institute of Science, Bangalore and a PhD from the University of Cambridge (1994).

I joined as a Junior Research fellow in 95, was promoted to a Senior Research fellow in 98 and was appointed Professor in Electronics and Materials at the Emerging Technologies Research Centre, De Montfort University in 2003.

I joined the EEE department at Sheffield as Professor of Microelectronics in 2007. I work in multi-disciplinary research focused on the physics of devices, materials and their microelectronic applications in computing, communications and energy conversion.

Until now, microelectronics has relied on the versatility of silicon CMOS to deliver enhancement in performance by scaling the MOS transistor. I have worked on various aspects of CMOS such as reliability, high-k gate oxides and Indium for retrograde channels, first introduced in production at the 65 nm node.

However, scaling (as we know it) is now nearing an end and alternate materials and device architectures are required for future semiconductor applications.

Supervised learning for image and speech recognition, autonomous driving and medical diagnosis in Artificial Intelligence (AI) presently rely on CMOS based deep neural networks.

These are inherently power-hungry due to a continuous exchange of information between the required large volume of memory and processing units.

It is expected that such Von Neumann architectures will be replaced by neuromorphic systems that are more akin to a biological brain.

Our team has recently demonstrated ZnO/Ta2O5 solid electrolyte thin film transistors with synaptic capabilities.

I am interested in exploring such memristive devices in neuromorphic applications, electrochemical storage and flexible electronics for health.

My interest in more efficient semiconductors, smart materials and systems that leave a smaller footprint on the environment, spans to GaN for power and RF applications, that I have previously explored in equivalent silicon- based device technologies such as the IGBT and the RF LDMOSFET.

These are driven by the automotive, aerospace, space, renewables, telecoms and consumer/industrial electronics sectors.

Our recent work includes a new class of harmonic RF power amplifiers with record efficiency and output power prototyped using commercial GaN devices.

We are also working towards a p-type MOSHFET and magnetic thin films for CMOS in GaN in power management integrated circuits and current sensors.

Qualifications
  • PhD (Engineering), University of Cambridge 1994
  • BEng (Electronics & Communications Engineering), Indian Institute of Science Bangalore 1988
  • BSc (Physics & Mathematics), University of Bombay 1985
Research interests

繚         GaN: CMOS, heterogeneous Integration, on-chip         inductors/magnetic materials for Power Management Integrated Circuits and power devices.

繚         Sensors and actuators for health applications.

繚         Memory devices for neuromorphic applications.

繚         RF Power Amplifiers.

繚         Perovskite solar cells.

Publications

Journal articles

  • Abdullah NF, Mamat R, Zulhakim AM, De Souza MM, Manut A & Abdullah WFH (2025) . Journal of Electrochemical Science and Engineering, 15(3).
  • Gaurav A, Song X, Manhas SK, Roy PP & De Souza MM (2025) . ACS Applied Materials & Interfaces, 17(11), 17590-17598.
  • Gaurav A, Song X, Manhas SK & De Souza MM (2025) . Journal of Materials Chemistry C, 13(6), 2804-2813.
  • Do H-B, Le D-N, Nguyen T-H, Nguyen VT, Phan-Gia A-V, Hien TD, Le H-M, Pham PV, De Souza MM & Nguyen Dang N (2024) . Ceramics International, 50(21), 43754-43762.
  • Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM & Roy VAL (2024) . Advanced Materials, 36(27).
  • Menon PS, Hatta SFWM & de Souza MM (2023) . IEEE Electron Devices Magazine, 1(2), 57-58.
  • Do H-B, Luc Q-H, Pham PV, Phan-Gia A-V, Nguyen T-S, Le H-M & De Souza MM (2023) . Micromachines, 14(8).
  • Assi DS, Huang H, Karthikeyan V, Theja VCS, de Souza MM, Xi N, Li WJ & Roy VAL (2023) . Advanced Science, 10(24).
  • Zhou J, Do H-B & De Souza MM (2023) . ACS Applied Electronic Materials, 5(6), 3309-3315.
  • Wang W, De Souza MM, Ghannam R, Li WJ & Roy VAL (2023) . Journal of Computational Electronics, 22(2), 768-782.
  • Poluri N & De Souza MM (2023) . IEEE Microwave and Wireless Technology Letters, 33(2), 181-184.
  • Do H-B, Zhou J & De Souza MM (2022) . ACS Applied Electronic Materials, 4(10), 4808-4813.
  • Do H-B, Phan-Gia A-V, Nguyen VQ & De Souza MM (2022) . AIP Advances, 12(6).
  • Gaurav A, Song X, Manhas S, Gilra A, Vasilaki E, Roy P & De Souza MM (2022) . Frontiers in Electronics, 3.
  • Hlaing MZ, Karthikeyan V, Wu W, Chen BJ, Ng AK, Chan C, De Souza MM & Roy VAL (2022) . Advanced Optical Materials, 10(8).
  • Karthikeyan V, Theja VCS, De Souza MM & Vellaisamy R (2022) . physica status solidi (RRL) Rapid Research Letters, 16(1).
  • Kumar A, Song X & De Souza MM (2021) . MRS Advances, 6(21), 540-545.
  • Lv S, Ye S, Chen C, Zhang Y, Wu Y, Wang Y, Tang R, De Souza MM, Liu X & Zhao X (2021) . Journal of Materials Chemistry C, 9(38), 13182-13192.
  • Poluri N & DeSouza MM (2021) . IEEE Microwave and Wireless Components Letters, 31(6), 593-596.
  • Faramehr S, Poluri N, Igic P, Jankovic N & De Souza MM (2019) . IEEE Transactions on Electron Devices, 66(10), 4367-4372.
  • Song X, Kumar A & De Souza MM (2019) . IEEE Journal of the Electron Devices Society.
  • Kumar A & De Souza MM (2019) . IEEE Transactions on Electron Devices, 66(7), 2916-2922.
  • Poluri N & De Souza MM (2019) . IEEE Microwave and Wireless Components Letters, 29(2), 137-139.
  • Poluri N & De Souza MM (2018) . IEEE Electron Device Letters, 39(11), 1752-1755.
  • Poluri N & De Souza MM (2018) . IEEE Transactions on Circuits and Systems II: Express Briefs, 65(9), 1159-1163.
  • Kumar A, Pillai PB, Song X & De Souza MM (2018) . ACS Applied Materials and Interfaces, 10(23), 19812-19819.
  • Kumar A & De Souza MM (2018) . Applied Physics Letters, 112(15).
  • Luo P, Long HY, Sweet MR, De Souza M & Madathil SNE (2018) . IEEE Transactions on Electron Devices, 65(4), 1440-1446.
  • Kumar A & De Souza MM (2018) . IET Power Electronics, 11(4).
  • Amano H, Baines Y, Borga M, Bouchet T, Chalker PR, Charles M, Chen KJ, Chowdhury N, Chu R, De Santi C , De Souza MM et al (2018) . Journal of Physics D: Applied Physics, 51.
  • Balakrishna Pillai P, Kumar A, Song X & De Souza MM (2018) . ACS Applied Materials and Interfaces, 10(11), 9782-9791.
  • Kumar A & De Souza MM (2017) . IEEE Electron Device Letters, 38(10), 1449-1452.
  • Balakrishna Pillai P & De Souza MM (2017) . ACS Applied Materials and Interfaces , 9(2), 1609-1618.
  • Corpus-Mendoza AN, De Souza MM & Hamelmann F (2015) . Journal of Renewable and Sustainable Energy, 7(6).
  • Pillai PB, DeSouza M, Narula R, Reich S, Wong LY, Batten T & Pokorny J (2015) . Journal of Applied Physics, 117(18), 183103-183103.
  • Corpus-Mendoza AN, De Souza MM & Hamelmann FU (2015) . IEEE Journal of Photovoltaics, 5(1), 22-27.
  • Cerdeira A, vila F, 簽iguez B, de Souza M, Pavanello MA & Estrada M (2014) . Solid-State Electronics, 94, 91-97.
  • Pillai PB, Corpus Mendoza AN, De Souza MM, Bree G & Jeng D (2014) . Journal of Renewable and Sustainable Energy, 6(2).
  • Pillai PB, Corpus Mendoza AN, De Souza MM, Bree G & Jeng D (2014) . Journal of Renewable and Sustainable Energy, 6(1).
  • Corpus-Mendoza AN, De Souza MM & Hamelmann F (2013) . Journal of Applied Physics, 114(18).
  • Umari P, Petrenko O, Taioli S & De Souza MM (2012) . J Chem Phys, 136(18), 181101.
  • Sicre SBF & De Souza MM (2012) . IEEE Transactions on Electron Devices, 59(3), 827-834.
  • Milne WI, Hofman S, Boggild P, McLaughlin J, Pagona G, Briggs GAD, Hiralal P, Teo KBK, Mogensen K & De Souza MM (2011) Position paper on Carbon Nanotubes. Nano 壅翌腦瞳letter, 20-21.
  • Cranney M, Vonau F, Pillai PB, Denys E, Aubel D, De Souza MM, Bena C & Simon L (2010) . Epl, 91(6).
  • Sicre SBF & De Souza MM (2010) . IEEE Transactions on Electron Devices, 57(7), 1642-1650.
  • Jejurikar S, Casterman D, Pillai PB, Petrenko O, De Souza MM, Tahraoui A, Durkan C & Milne WI (2010) . Nanotechnology, 21(21).
  • Casterman D & De Souza MM (2010) . Journal of Applied Physics, 107(6).
  • Jejurikar SM, De Souza MM & Adhi KP (2009) . THIN SOLID FILMS, 518(4), 1177-1179.
  • Taioli S, Umari P & De Souza MM (2009) . PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 246(11-12), 2572-2576.
  • Chevaux N & De Souza MM (2009) . IEEE Transactions on Microwave Theory and Techniques, 57(11), 2643-2651.
  • Premlal B, Cranney M, Vonau F, Aubel D, Casterman D, De Souza MM & Simon L (2009) . Applied Physics Letters, 94(26).
  • Casterman D, De Souza MM, Tahraoui A, Durkan C & Milne WI (2009) . Physical Review B Condensed Matter and Materials Physics, 79(12).
  • Shah R & De Souza MM (2008) . Thin Solid Films, 517(1), 412-415.
  • Cross RBM & De Souza MM (2008) . IEEE Transactions on Device and Materials Reliability, 8(2), 277-282.
  • Cross RBM, De Souza MM, Deane SC & Young ND (2008) . IEEE Transactions on Electron Devices, 55(5), 1109-1115.
  • De Souza MM, Jejurikar S & Adhi KP (2008) . Applied Physics Letters, 92(9).
  • Cross RBM & De Souza MM (2008) The effect of gate bias stress and temperature on the performance of ZnO Thin Film Transistors. IEEE Trans. Device and Materials Reliability, 8, 277.
  • Milne WI, Mann M, Dijon J, Bachmann P, McLaughlin J, Robertson J, Teo KBK, De Souza MM, Boggild P, Briggs A , Mogensen B et al (2008) Position paper on Carbon Nanotubes. Nanonewsletter.(13).
  • De Souza MM, Cross RB, Jejurikar S & Adhi KP (2007) . MRS Proceedings, 1035.
  • Sicre SBF & De Souza MM (2007) . IEEE Transactions on Electron Devices, 54(9), 2551-2555.
  • Fioravanti P, Spulber O & De Souza MM (2007) . IEEE Transactions on Microwave Theory and Techniques, 55(5), 829-837.
  • Shah R & De Souza M (2007) . ECS Meeting Abstracts, MA2007-01(29), 1102-1102.
  • De Souza MM, Fioravanti P, Cao G & Hinchley D (2007) . IEEE Transactions on Device and Materials Reliability, 7(1), 162-174.
  • Casterman D & De Souza MM (2007) Ab initio investigation of charge controlled technique for control of Schottky contacts in CNTs. Journal of Materials, 0957, 4522-4522.
  • Shah R & De Souza MM (2007) . IEEE Transactions on Electron Devices, 54(11), 2991-2997.
  • Cross RBM & De Souza MM (2006) . MRS Proceedings, 957.
  • Cross RBM & De Souza MM (2006) . Applied Physics Letters, 89(26).
  • De Souza MM, Chakravarthi S & Jain A (2005) Defect interaction mechanisms between antimony and indium in silicon. GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, 425-430.
  • Moguilnaia NA, Vershinin KV, Sweet MR, Spulber OI, De Souza MM & Narayanan EMS (2005) . IEEE Transactions on Engineering Management, 52(4), 429-439.
  • Luther-King N, Sweet M, Spulber O, Vershinin KV, De Souza MM & Narayanan EMS (2005) . IEEE Transactions on Electron Devices, 52(9), 2075-2080.
  • Cross RBM, De Souza MM & Sankara Narayanan EM (2005) . Nanotechnology, 16(10), 2188-2192.
  • De Souza MM, Chakravarthi S & Jain A (2005) . JOURNAL OF PHYSICS-CONDENSED MATTER, 17(22), S2165-S2170.
  • De Souza MM & Goss J (2005) DFT analysis of the Indium-Arsenic-vacancy cluster in silicon. Journal of solid state defects: Defects and diffusion in Semiconductors: An Annual Retrospective VIII, 29-29.
  • Shishkin M, Yan A & De Souza MM (2004) Interactions of indium, arsenic and carbon in silicon using the pseudopotential technique. SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY, 810, 333-338.
  • Cao G, Manhas SK, Narayanan EMS, De Souza MM & Hinchley D (2004) . IEEE Transactions on Electron Devices, 51(8), 1296-1303.
  • Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2004) . IEE Proceedings Circuits Devices and Systems, 151(3), 203-206.
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM, Sankara-Narayanan EM, Flores D & Millan J (2004) . IEE Proceedings Circuits Devices and Systems, 151(3), 265-268.
  • Hardikar S, De Souza MM, Xu YZ, Pease TJ & Sankara Narayanan EM (2004) . Microelectronics Journal, 35(3), 305-310.
  • Sankara Narayanan EM, Spulber O, Sweet M, Bose JVSC, Verchinine K, Luther-King N, Moguilnaia N & De Souza MM (2004) . Microelectronics Journal, 35(3), 235-248.
  • Shishkin MP & De Souza MM (2004) . Physical Review B Condensed Matter and Materials Physics, 69(3).
  • De Souza MM, Manhas SK, Chandra Sekhar D, Oates AS & Chaparala P (2004) . Microelectronics Reliability, 44(1), 25-32.
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2004) . Solid State Electronics, 48(12), 2207-2211.
  • Martin-Bragado I, Jaraiz M, Castrillo P, Pinacho R, Barbolla J & De Souza M (2003) . Physical Review B Condensed Matter and Materials Physics, 68(19).
  • Luo J, Cao G, Ekkanath Madathil SN & De Souza MM (2003) . Solid State Electronics, 47(11), 1937-1941.
  • Manhas SK, Sehkar DC, Oates AS & De Souza MM (2003) . MICROELECTRONICS RELIABILITY, 43(4), 617-624.
  • Udrea F, Udugampola UNK, Sheng K, McMahon RA, Amaratunga GAJ, Narayanan EMS, De Souza MM & Hardikar S (2002) . IEEE Electron Device Letters, 23(12), 725-727.
  • Chichkine MP & De Souza MM (2002) . Physical Review B Condensed Matter and Materials Physics, 66(4), 452051-452056.
  • Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Sankara Narayanan EM (2002) . Solid State Electronics, 46(6), 903-909.
  • Xu YZ, Cross R, Manhas M, Clough FJ, DeSouza MM, Narayanan EMS, Flores D, Rebello J, Vellvehi M & Millan J (2002) . Applied Physics Letters, 80(12), 2192-2194.
  • Chichkine MP, De Souza MM & Sankara Narayanan EM (2002) . Physical Review Letters, 88(8), 085501/1-085501/4.
  • Roig J, Vellvehi M, Flores D, Rebollo J, Millan J, Krishnan S, De Souza MM & Sankara Narayanan EM (2002) . Solid State Electronics, 46(2), 255-261.
  • Sweet M, Vershinin K, Ngwendson L, Spulber O, Moguilnaia N, De Souza MM & Narayanan EMS (2002) Advancement on power semiconductor Devices. Power Electronics Europe(6), 28-35.
  • De Souza MM, Chichkine MP & Sankara Narayanan EM (2001) . Physica B Condensed Matter, 304(1-4), 483-488.
  • Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2001) . Solid State Electronics, 45(7), 1055-1058.
  • Krishnan S, De Souza MM, Narayanan EMS, Vellvehi M, Roig J, Flores D, Rebollo J & Millan J (2001) . Microelectronics Journal, 32(5-6), 481-484.
  • Sweet M, Ngw CK, Spulber O, Ngwendson JVL, Vershinin KV, Bose SC, De Souza MM & Narayanan EMS (2001) . Microelectronics Journal, 32(5-6), 527-536.
  • Bose JVSC, De Souza MM, Narayanan EMS, Ensell G, Pease TJ & Humphery J (2001) . Microelectronics Journal, 32(4), 323-326.
  • Sweet M, De Souza MM, Spulber O, Bose JVSC & Sankara Narayanan EM (2001) Clustered Insulated Gate Bipolar Transistor - A New Power Semiconductor Device. IEE Proceedings Special Issue: Circuits, Devices and systems, 148 (2), 75-78.
  • Spulber O, De Souza MM, Sweet M, Bose JVSC & Sankara Narayanan EM (2001) The Injection-Enhancement Effect in a Novel, Trench Planar Insulated Gate Bipolar Transistor. IEE Proceedings Special Issue: Circuits, Devices and Systems,, 148(2), 79-82.
  • De Souza MM, Wang J, Manhas S, Oates AS & Sankara Narayanan EM (2001) A Comparison of Early Stage Hot carrier Degradation behaviour in 5V & 3 V submicron Low Doped Drain Metal Oxide Semiconductor Field Effect Transistors. Microelectronics reliability, 42(2), 169.
  • Manhas SK, De Souza MM & Oates AS (2001) Quantifying the nature of hot carrier degradation in the Spacer Region of LDD n MOSFETs. IEEE Transactions on Devices and Materials Reliability, 1, 134.
  • Luther-King N, Sweet M, Spulber O, Vershinin K, Ngw CK, Bose SC, De Souza MM & Sankara Narayanan EM (2001) . Solid State Electronics, 45(1), 71-77.
  • Ngw CK, Sweet M, Subhas Chandra Bose JV, Spulber O, Luther King N, Vershinin K, De Souza MM & Sankara Narayanan EM (2001) . Solid State Electronics, 45(1), 127-132.
  • Hardikar S, Xu YZ, Cao GJ, De Souza MM & Sankara Narayanan EM (2001) . Microelectronics Journal, 32(2), 121-126.
  • Cao GJ, De Souza MM & Narayanan EMS (2000) . Solid State Electronics, 44(10), 1869-1873.
  • Hardikar S, Xu YZ, De Souza MM & Sankara Narayanan EM (2000) . Electronics Letters, 36(18), 1587-1589.
  • De Souza MM, Bose JVSC, Narayanan EMS, Pease TJ, Ensell G & Humphreys J (2000) . SOLID-STATE ELECTRONICS, 44(8), 1381-1386.
  • Krishnan S, De Souza MM, Sankara Narayanan EM, Vellvehi M, Flores D, Rebollo J & Millan J (2000) . Electronics Letters, 36(14), 1242-1244.
  • Hardikar S, Cao G, Xu Y, De Souza MM & Narayanan EMS (2000) . Solid State Electronics, 44(7), 1213-1218.
  • Wang J, Williams B, Sankara Narayanan EM & De Souza MM (2000) A Closed form analytical solution of 6H-SiC punch-through junction breakdown voltages. Materials Science Forum, 338-3, 1359.
  • Wang J, Williams B, Sankara Narayanan EM & De Souza MM (2000) Comparison of 5kV 4H-SiC N-channel and P-Channel IGBTs. Material Science Forum, 338-3, 1411.
  • Qin Z, Narayanan EMS & De Souza MM (2000) . MICROELECTRONICS JOURNAL, 31(3), 175-185.
  • Spulber O, Sankara Narayanan EM, Hardikar S, De Souza MM, Sweet M & Subhas Chandra Bose JV (1999) . IEEE Electron Device Letters, 20(11), 580-582.
  • Xu YZ, Hardikar S, DeSouza MM, Cao GJ & Narayanan EMS (1999) . Electronics Letters, 35(21), 1880-1881.
  • De Souza MM, Ngw CK, Shishkin M & Narayanan EMS (1999) . Physical Review Letters, 83(9), 1799-1801.
  • Qin ZX, Narayanan EMS & De Souza MM (1999) . SOLID-STATE ELECTRONICS, 43(10), 1845-1853.
  • De Souza MM & Sankara Narayanan EM (1998) Self-diffusion in silicon. Defect and Diffusion Forum, 153-155, 69-80.
  • Sankara Narayanan EM, De Souza MM & Qin Z (1997) Novel lateral MOS controlled power devices and technologies for high voltage integrated circuits. Solid State Phenomena, 55, 51.
  • De Souza MM & Sankara Narayanan EM (1996) . Electronics Letters, 32(12), 1092-1093.
  • De Souza MM & Amaratunga GAJ (1996) . Journal of Applied Physics, 79(5), 2418-2425.
  • De Souza MM, Leaver KD & Eskiyerli MH (1995) . Computational Materials Science, 4(3), 233-240.
  • De Souza MM & Amaratunga GAJ (1995) . Solid-State Electronics, 38(4), 867-872.
  • De Souza MM & Amaratunga GAJ (1994) . Computational Materials Science, 3(1), 69-77.
  • Da Rocha VC & De Souza MMC (1991) . Electronics Letters, 27(17), 1564-1566.

Book chapters

  • Balakrishna Pillai P & De Souza MM (2023) , Modeling, Characterization, and Production of Nanomaterials (pp. 271-303). Elsevier
  • Balakrishna Pillai P & De Souza MM (2022) , Modeling Characterization and Production of Nanomaterials Electronics Photonics and Energy Applications Second Edition (pp. 271-303).
  • Pillai P & De Souza MM (2015) , Modeling, Characterization, and Production of Nanomaterials (pp. 203-231). Elsevier
  • De Souza MM, Cao G & Hinchley D (2006) Drift Engineering of Silicon RF Power MOSFETs In Cai WZ (Ed.), Si-based semiconductor components for radio-frequency integrated circuits (RFIC)

Conference proceedings

  • Gaurav A, Song X, Manhas SK & De Souza MM (2025) . 2024 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp 45-48). Salt Lake City, Utah, USA, 21 October 2024 - 21 October 2024.
  • Souza MMD & Poluri N (2024) . 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp 1-3), 3 March 2024 - 6 March 2024.
  • De Souza MM, Song X, Gaurav A, Manhas SK, Pillai PB, Sikdar S, Kumar A, Gilra A & Vasilaki E (2023) . 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp 139-140). Paestum, Italy, 22 October 2023 - 22 October 2023.
  • Song X, Gaurav A, Pillai PB, Kumar A, Manhas S, Gilra A, Vasilaki E & de Souza MM (2023) . 2023 IEEE International Flexible Electronics Technology Conference (IFETC) (pp 1-3). San Jose, USA, 13 August 2023 - 13 August 2023.
  • Zhou J, Do H-B & De Souza MM (2023) . 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp 1-3). Seoul, Korea, 7 March 2023 - 7 March 2023.
  • Gaurav A, Song X, Manhas SK, Roy PP & De Souza MM (2023) . 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp 1-3). Seoul, Korea, 7 March 2023 - 7 March 2023.
  • Do H-B, Hoang-Trung H, Nguyen T-T, Pham V-C, Nguyen T-L, Phan-Gia A-V & De Souza MM (2022) Fabrication of graphene oxide from the graphite rod of a disposed battery. 2022 6th International Conference on Green Technology and Sustainable Development (GTSD) (pp 704-707). Nha Trang City, Vietnam, 29 July 2022 - 29 July 2022.
  • Poluri N & De Souza MM (2022) . MOS-AK Workshop. Puebla, Mexico, 3 July 2022 - 3 July 2022.
  • Poluri N & De Souza MM (2022) . 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC) (pp 1-3), 7 April 2022 - 8 April 2022.
  • Poluri N, De Souza MM, Venkatesan N & Fay P (2021) . 2021 28th International Conference on Mixed Design of Integrated Circuits and System (pp 45-50). Lodz, Poland (online), 24 June 2021 - 24 June 2021.
  • Poluri N, Venkatesan N, De Souza MM & Fay P (2021) Influence of a graded channel HEMT on the performance of Class BJF-1 amplifiers for 5G applications. Conference Booklet WOCSDICE '21. Bristol, UK (online), 21 June 2021 - 21 June 2021.
  • Song X, Kumar A & De Souza MM (2021) . 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp 1-3), 8 April 2021 - 11 April 2021.
  • Poluri N & de Souza MM (2019) . 2019 IEEE Asia-Pacific Microwave Conference (APMC) (pp 1637-1639), 10 December 2019 - 13 December 2019.
  • Poluri N & De Souza MM (2019) Class BJF-1: Simplifying the design methodology of RF Power Amplifiers. Proceedings of ARMMS Conference. Oxford, UK, 1 April 2019 - 1 April 2019.
  • Song X, Kumar A & De Souza MM (2019) . Proceedings of the 3rd Electron Devices Technology manufacturing conference.. Singapore, 13 March 2019 - 15 March 2019.
  • Zhou J, Kumar A & De Souza MM (2018) Influence of an underlying 2DEG on the performance of a p-channel MOSHFET in GaN. Proceedings of the IWN 2018
  • De Souza M, Pillai PB, Kumar A & Song X (2018) Solid electrolyte transistors: mechanisms and applications. Abstract Book TCM 2018 (pp 100). Crete, Greece, 14 October 2018 - 14 October 2018.
  • Kumar A & De Souza MM (2018) . 2018 IEEE Electron Devices Technology and Manufacturing Conference Edtm 2018 Proceedings (pp 184-186)
  • Kumar A & De Souza MM (2017) Mechanism of turn-off operation in E-mode p-channel MOSHFET in GaN. UK Semiconductors 2017 Book of Abstracts. Sheffield, United Kingdom, 12 July 2017 - 12 July 2017.
  • Batten T, Pillai PB & De Souza MM (2017) Raman spectroscopy characterisation of laser induced degradation in methyl ammonium lead iodide perovskite layers. UK Semiconductors 2017
  • Song X, Pillai PB, Batten T & De Souza MM (2017) Highly oriented (202) mixed halide perovskite for enhanced solar cell performance. UK Semiconductors book of abstracts 2017
  • Luo P, Long HY, Sweet MR, De Souza MM & Narayanan EMS (2017) . Proceedings of the 26th International Symposium on Industrial Electronics (pp 612-615), 19 June 2017 - 21 June 2017.
  • Kumar A & De Souza MM (2016) . 2016 IEEE International Electron Devices Meeting (IEDM)
  • De Souza MM & Pillai P (2016) The behaviour and peculiarities of ZnO/Tantalum oxide memristor system. Book of abstracts TCM 2016 (pp 142-142). Chania, Crete, Greece, 9 October 2016 - 9 October 2016.
  • Kumar A, Pillai PB & De Souza MM (2016) Diffusion mechanism of vacancies in Tantalum oxide. TCM 2016
  • Pillai PB & De Souza MM (2016) Memory and Learning behaviour of ZnO based transparent synaptic thin film transistors. TCM 2016
  • Kumar A & De Souza MM (2016) Theoretical Modelling of 2DEG and 2DHG in III-Nitride based heterostructures . Proceedings of the ISPS 2016. Prague, 31 August 2016 - 31 August 2016.
  • Rasheduzzaman M, Pillai PB, Mendoza ANC & De Souza MM (2016) . Proceedings of the 2016 10th International Symposium on Communication Systems, Networks and Digital Signal Processing (CSNDSP) (pp 1-6)
  • Rasheduzzaman M & De Souza MM (2016) Evaluation of the Analytic Approach for design of deep class AB Power Amplifiers in GaN. Book of abstracts UK semiconductors. Sheffield, UK , 6 July 2016 - 6 July 2016.
  • Kumar A & De Souza MM (2016) Theoretical modelling of 2DHG in Oxide/GaN/AlGaN/GaN heterostructures. Book of abstracts UK semiconductors. Sheffield, UK, 6 July 2016 - 6 July 2016.
  • Pillai PB & De Souza MM (2016) Centimetre scale mesoscopic perovskite solar cells via a novel combined solid state-solution crystallisation method. Book of abstracts UK Semi 2016. Sheffield, UK, 6 July 2016 - 6 July 2016.
  • Rasheduzzaman M, Chevaux N, De Souza MM, McEwan N, Rayit R & Brunning J (2016) . Proceedings of the Active and Passive RF devices Seminar (pp 8 (7 .)-8 (7 .)-8 (7 .)-8 (7 .))
  • Pillai PB & De Souza MM (2015) . Proceedings of the IEDM (pp 28.1.1-28.1.4)
  • Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) . 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (pp 33-36), 10 May 2015 - 14 May 2015.
  • Long HY, Sweet MR, De Souza MM & Narayanan EMS (2015) . 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) (pp 1266-1269), 15 March 2015 - 19 March 2015.
  • De Souza MM, Rasheduzzaman M & Kumar SN (2014) . Proceedings of ICCDCS 2014 (pp 1-5)
  • Pillai PB, Umari P & De Souza MM (2013) . Technical Digest International Electron Devices Meeting Iedm (pp 32.2.4)
  • Barrett JA, De Souza MM, Cirstea M & Cirstea S (2012) . Proceedings of the International Conference on Optimisation of Electrical and Electronic Equipment Optim (pp 822-826)
  • De Souza MM, Chevaux N, Rasheduzzaman M & De Souza MM (2012) Progress of Power devices in RF Applications. Proceedings of the ISPS
  • De Souza MM, Chevaux N & Rasheduzzaman M (2012) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 8549
  • De Souza MM, Sicre SBF & Casterman D (2011) . Ecs Transactions, Vol. 35(4) (pp 563-580)
  • Pillai P, De Souza MM, Batten T, Zhang T & Pokorny J (2011) Band structure modifications in self assembled graphene superlattice probed by dispersive Raman spectroscopy. UK Semiconductors 2011. Sheffield, 2011.
  • Barrett JA, De Souza MM & Cirstea S (2010) . Proceedings of the International Conference on Optimisation of Electrical and Electronic Equipment Optim (pp 180-184)
  • Chevaux N & De Souza MM (2010) . Proceedings of the Mediterranean Electrotechnical Conference MELECON (pp 691-694)
  • Nathan A, Milne B, Migliorato P, De Souza MM, Iniguez B, Fruehauf N, Saha S, Deen J, Chaji R, Kuo JB , Kim HJ et al (2009) . 2009 Compact Thin-Film Transistor Modeling for Circuit Simulation (pp 1-1), 25 September 2009 - 25 September 2009.
  • Chevaux N & De Souza MM (2009) . APMC 2009 Asia Pacific Microwave Conference 2009 (pp 1112-1115)
  • Shah R & De Souza MM (2009) Scattering at MOS Interfaces. WORLD CONGRESS ON ENGINEERING 2009, VOLS I AND II (pp 392-+)
  • Sicre S & De Souza MM (2009) Dit characterisation from small signal analysis of Poly/TiN HfO2 gated MOSFETS. International Gate Stack Conference. San Fransisco
  • Shah R & De Souza MM (2009) Semi-Empirical Phonon Scattering Model. WORLD CONGRESS ON ENGINEERING 2009, VOLS I AND II (pp 417-+)
  • Casterman D & De Souza MM (2009) . JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 1, NO 1, Vol. 1(1) (pp 24-28)
  • De Souza MM, Cross RB, Jejurikar S & Adhi KP (2008) Performance of ZnO TFTs with AlN as insulator. Materials Research Society Symposium Proceedings, Vol. 1035 (pp 176-180)
  • Casterman D & De Souza MM (2008) Effect of Hydrazine on Al contacted CNTFETs using density functional theory. Journal of Scientific Conference Proceedings, Vol. 1 (pp 19-23)
  • Cross RBM & De Souza MM (2007) . 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL (pp 467-+)
  • Cross RBM & De Souza MM (2007) The impact of Fermi pinning on thermal properties of the instabilities in ZnO TFTs. ZINC OXIDE AND RELATED MATERIALS, Vol. 957 (pp 403-+)
  • Casterman D & De Souza MM (2007) . JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Vol. 18(7) (pp 729-734)
  • Shah R & De Souza MM (2007) . ECS Transactions, Vol. 6(16) (pp 61-71)
  • De Souza MM, Cross RBM, Ngwashi D, Jejurikar S & Adhi KP (2007) Performance and Stability of ZnO TFTs with SiO2, SiN and AlN gate insulators. Proceedings of the MRS 2007 Multifunctional oxides. Greece, 2007.
  • Casterman D & De Souza MM (2006) . MRS Proceedings, Vol. 963
  • Atarah SA, De Souza MM, Peterson J, Bersuker G, Brown G & Young C (2006) . Ecs Transactions, Vol. 3(3) (pp 49-56)
  • Atarah S, De Souza MM & Atarah S (2006) . ECS Meeting Abstracts, Vol. MA2006-02(22) (pp 1088-1088)
  • Yan X, Shishkin M & De Souza MM (2004) A study of indium activation in silicon using pseudopotential calculations. 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 (pp 283-286)
  • Sekhar DC, Ray PP, De Souza MM & Chaparala P (2004) Edge effect under temperature bias stress of 0.18 弮m PMOS technology. 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 (pp 645-648)
  • Cao G & De Souza MM (2004) . 2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS (pp 283-287)
  • Cao G & De Souza MM (2004) . IEEE International Reliability Physics Symposium Proceedings, Vol. 2004-January(January) (pp 283-287)
  • Green DW, Hardikar S, Sweet M, Vershinin K, Tadikonda R, De Souza MM & Narayanan EMS (2004) Influence of temperature and doping parameters on the performance of segmented anode NPN (SA-NPN) LIGBT. ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 285-287)
  • Cao G, Narayanan EMS, De Souza MM, Flores D, Vellvehi M, Hidalgo S, Millan J & Hinchley D (2004) . IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD, Vol. 16 (pp 241-244)
  • Vershinin K, Sweet M, Spulber O, Hardikar S, Luther-King N, De Souza MM, Sverdloff S, Narayanan EMS & Hinchley D (2004) . IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD, Vol. 16 (pp 269-272)
  • Udugampola UNK, McMahon RA, Udrea F, Sheng K, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2003) Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 216-219)
  • Spulber O, Sweet M, Vershinin K, Luther-King N, Sankara-Narayanan EM, De Souza MM, Flores D & Millan J (2003) 1.7kV NPT V-groove clustered IGBT - Fabrication and experimental demonstration. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 345-348)
  • Luther-King N, Sweet M, Spulber O, Vershinin K, De Souza MM & Narayanan EMS (2003) Anode-gated MOS controlled thyristor with ultra-fast switching capability. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 299-302)
  • Manhas M, Pease TJ, Cross R, Bose SC, Oxley DP, De Souza MM & Sankara Narayanan EM (2002) . Materials Research Society Symposium Proceedings, Vol. 716 (pp 317-323)
  • Luo J, Cao G, Spulber O, Hardikar S, Feng YM, Narayanan EMS & De Souza MM (2002) Influence of physical parameters on the quasi-saturation of a power SOI RF LDMOS. IEEE International Conference on Semiconductor Electronics Proceedings ICSE (pp 314-318)
  • De Souza MM, Cao G, Sankara Narayanan EM, Youming F, Manhas SK, Luo J & Moguilnaia N (2002) . ICCDCS 2002 4th IEEE International Caracas Conference on Devices Circuits and Systems
  • Krishnan S, Narayanan EMS, Xu YZ, Clough FJ, De Souza MM, Flores D, Vellvehi M & Millan J (2002) Novel dual gate high voltage TFT with variable doping slot. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 155-158)
  • Manhas SK, De Souza MM, Oates AS & Chen Y (2002) . PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (pp 227-231)
  • Manhas SK, Sekhar DC, Oates AS & De Souza MM (2002) Nature of hot carrier damage in Spacer oxide of LDD n-MOSFETs. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 735-739)
  • Udugampola UNK, Khoo GFW, Sheng K, McMahon RA, Udrea F, Amaratunga GAJ, Narayanan EMS, Hardikar S & De Souza MM (2002) . IEE Conference Publication(487) (pp 557-561)
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Sankara-Narayanan EM (2002) Overview of trench gated MOS-Controlled bipolar semiconductor power devices. Proceedings of SPIE the International Society for Optical Engineering, Vol. 4746 I (pp 444-449)
  • Hardikar S, De Souza MM & Sankara Narayanan EM (2002) Advances in devices and technologies for power and high voltage integrated circuits. Proceedings of SPIE the International Society for Optical Engineering, Vol. 4746 I (pp 422-431)
  • Moguilnaia NA, Vershinin KV, Sweet MR, Hardikar S, Ngwendson LK, Spulber O, Rouse MJ, De Souza MM & Narayanan EMS (2002) The investigation into the recent mergers and acquisitions in power semiconductor industry. IEEE International Engineering Management Conference, Vol. 2 (pp 826-830)
  • Sweet M, Spulber O, Ngwendson L, Vershinin KV, De Souza MM & Narayanan EMS (2002) The accumulation enhanced emitter switched thyristor - a novel area efficient power semiconductor device. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 151-154)
  • Narayanan EMS, Moguilnaia N, Vershinin K, Sweet M, Hardikar S, Ngwendson L, Spulber O & De Souza MM (2002) Innovation and competition: Are they crucial in power semiconductor industry? A market perspective. 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS (pp 7-13)
  • Spulber O, De Souza MM, Sweet M, Bose JVSC & Narayanan EMS (2001) . IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 79-82)
  • Sweet M, Spulber O, Bose JVSC, Ngwendson L, Vershinin KV, De Souza MM & Narayanan EMS (2001) Clustered insulated gate bipolar transistor: a new power semiconductor device. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, Vol. 148(2) (pp 75-78)
  • Spulber O, Sweet M, Vershinin K, Luther-King N, De Souza MM & Narayanan EMS (2001) A novel, 1.2 kV trench clustered IGBT with ultra high performance. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 323-326)
  • De Souza MM, Chichkine MP & Narayanan EMS (2000) Self-interstitial clusters in silicon. Materials Research Society Symposium Proceedings, Vol. 610 (pp B11.3.5)
  • Bose JVSC, De Souza MM, Sweet M, Spulber O & Narayanan EMS (2000) A novel area efficient edge termination technique for planar, MOS controlled power devices. PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, Vol. 3975 (pp 349-352)
  • De Souza MM, Spulber O & Narayanan EMS (2000) . 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS (pp 313-316)
  • Cao GJ, De Souza MM & Narayanan EMS (2000) Resurfed lateral bipolar transistors for high-voltage, High-frequency applications. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 185-187)
  • Sankara Narayanan EM, Sweet MR, Luther-King N, Vershinin K, Spulber O, De Souza MM & Subhas Chandra Bose JV (2000) A novel, clustered insulated gate bipolar transistor for high power applications. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 173-181)
  • Krishnan S, De Souza MM, Sankara Narayanan EM, Vellveh穩 M, Flores D, Rebollo J & Mill獺n J (2000) The radial confinement: A new approach to high voltage lateral power devices. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 349-352)
  • Spulber O, Sweet M, Vershinin K, Ngw Y, Ngwendson L, Bose SCJV, De Souza MM & Narayanan EMS (2000) Influence of the N plus floating emitter on the on-state characteristics of the trench EST. 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS (pp 329-332)
  • Manhas SK, De Souza MM, Oates AS, Chetlur SC & Narayanan EM (2000) . Annual Proceedings Reliability Physics Symposium (pp 108-111)
  • Narayanan EMS, Sweet M, Spulber O, De Souza MM & Bose SC (2000) Clustered IGBT - A new power semiconductor device. PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, Vol. 3975 (pp 1307-1312)
  • Spulber O, Narayanan EMS, De Souza MM, Sweet M, Bose SCJV & Hardikar S (1999) Trench planar insulated gate bipolar transistor (TPIGBT). Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 51-54)
  • Spulber O, De Souza MM, Sankara Narayanan EM & Krishnan S (1999) Analysis of a COOL-MOSFET. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 131-135)
  • Bose SCJV, De Souza MM, Narayanan EMS, Spulber O & Sweet M (1999) Influence of a shallow p+ offset region on a novel edge termination technique using lightly doped p-rings. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 63-66)
  • Cao G, De Souza MM & Sankara Narayanan EM (1999) High performance 60-V class lateral power MOSFET on thin film SOI with a graded doping profile in the drift region. Proceedings of the International Semiconductor Conference CAS, Vol. 1 (pp 123-126)
  • Spulber O, Narayanan EMS, De Souza MM, Sweet M, Hardikar S & Subhas Chandra Bose JV (1999) The trench planar insulated gate bipolar transistor (TPIGBT). IEE Colloquium Digest(104) (pp 75-79)
  • Hardikar S, Sankara Narayanan EM, De Souza MM, Huang AQ & Amaratunga G (1999) Novel dual gated lateral MOS-Bipolar power device. IEEE International Symposium on Power Semiconductor Devices and Ics ISPSD (pp 261-264)
  • Narayanan EMS, Qin Z, De Souza MM & Amaratunga G (1998) . ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS (pp 221-224)
  • Poluri N & De Souza MM () A methodology to characterise the virtual gate effect in a power amplifier. 2024 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Proceedings. Hyderabad, India, 9 December 2024 - 9 December 2024.
  • Rasheduzzaman M, Chevaux N & De Souza MM () A study of the mechanism of the nonlinear input capacitance on the RF performance in GaN HEMT devices. Automated RF and Microwave Measurement Society (ARMMS) 33rd conference. Wyboston, 9 November 2015 - 10 November 2015.
  • Corpus Mendoza A & De Souza MM () Engineering of the window layer for optimum performance of thin film silicon solar cells. 4th International Symposium on Energy Challenges & Mechanics. Aberdeen, Scotland, 11 August 2015 - 13 August 2015.
  • Long H, Sweet M, De Souza MM & Madathil () A New Generation of Clustered IGBT with High Ruggedness. PCIM. Shanghai, 25 June 2015 - 25 June 2015.
  • De Souza MM & Pillai P () Stability of transparent oxide thin film transistors. Thirteenth international meeting on information displays. Daegu Korea, 2013.
  • Mendoza A, De Souza MM & Hammelmann F () Extraction of Schottky Barrier in the presence of bias dependent ideality factors in ZnO/弮c-Si:H heterojunctions for solar cells. Fourth international symposium on transparent conductive materials. Greece, 2012.
  • Chevaux N & De MM () Investigating Reverse Intermodulation Distortion in Power Amplifiers. UK Semiconductors. Sheffield, 2012.
  • Crozier B, Pillai P & De Souza MM () Investigation into the Fabrication of Vanadium Dioxide Thin Films using the Precursor Oxidation Process. UK Semiconductors. Sheffield, 2012.
  • Pillai P & De SOuza M () Importance of band gap on the performance prediction in carbon nanotube and graphene nanoribbon devices. UK Semiconductors. Sheffield, 2012.
  • Chevaux N & De Souza MM () Analytic Approach to design of harmonically tuned RF Power Amplifiers. UK Semiconductors. Sheffield, 2011.
  • De Souza MM, De Souza MM, Sicre S & Casterman D () High-k Gate Dielectric MOSFETs: Meeting the challenges of characterisation and modelling,. ECS Transactions 35(4), 563 (2011).
  • Casterman D, Pillai P, De Souza MM, Cranney M, Vonau F, Aubel D & Simon L () Ab initio investigation of the doping effect of epitaxial graphene via intercalation of a gold monolayer. 10th International conference on the science of application of Nanotubes 2009. Beijing, 2010.
  • Casterman D & De Souza MM () Variation of dielectric permittivity through insulator/silicon interface: Effect on Coulomb limited mobility in MOSFETs. UK Semiconductors. Sheffield, 2010.
  • Ravindran K & De Souza MM () Investigating the TCO ZnO and p-type microcrystalline silicon contact for thin film solar cells. Third International conference on Transparent Conducting Materials, Greece 2010. Greece, 2010.
  • Jejurikar S, Casterman D, Pillai P & De Souza MM () Diameter dependent electrical measurements of individual SW-CNTFET. Final Fone Conference. Madrid, 2009.
  • De Souza MM, Cranney M, Vonau F, Aubel D, Simon L, Casterman D, Pillai P & De Souza MM () Surface intercalation of gold underneath a graphene monolayer on SiC(0001) studied by Scanning Tunneling Microscopy (STM) and Spectroscopy (STS). 10th International conference on Atomically controlled surfaces, interfaces and nanostructures. Granada, 2009.
  • De Souza MM, Pillai P, Casterman D, Jejurikar S & Petrenko O () Carbon based electronics- A perspective from theory and experiment. Final Fone Conference. Madrid, 2009.
  • Taioli S, Simonucci S, Calliari L, Fillipi M, De SOuza MM & Dapor M () Mixed Ab-initio Quantum Mechanical/Monte Carlo Calculations to Probe Electronic Correlations in Graphite and Graphene Nanostructures. MRS. san Fransisco, 2009.
  • Casterman D, Pillai P & De Souza MM () Diameter dependence of the charge transfer between CNTs and a chemical p-type dopant. MRS. Boston, 2008.
  • De Souza MM () Schottky barrier Heights of Carbon nanotube FETs: Experiment versus Theory. ICCES. Honolulu, 2008.
  • Taioli S, Umari P & De Souza MM () Electronic Properties of carbon based nanostructures from GW calculations. Nanotubes 2008. Montpellier, 2008.
  • Casterman D, Taioli S, De Souza MM, Tahroui A, Durkan C & Milne WI () Highlights of progress on the determination of intrinsic transport properties of CNTFETs. First Fone conference. Taormina, Sicily, 2008.
  • Souza MMD, Chakravarthi S & Jain A () (pp 425-432)
  • Sheng K, Udugampola UNK, Khoo GFW, Udrea F, Amaratunga GAJ, McMahon RA, Narayanan EMS, De Souza MM & Hardikar S () . Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics (pp 37-37)
  • Mugnier M, Manhas SK, Chandra Sekhar D, Krishnan S, Cross R, Sankara Narayanan EM, De Souza MM, Flores D, Vellvehi M & Millan J () . Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) (pp 219-222)
Professional activities and memberships
  • Chair in Microelectronics, EEE Department, University of Sheffield (2007-)
Research students
Student Degree Status Primary/Secondary
Balakrishnapillai P PhD Graduated Primary
Casterman D PhD Graduated Primary
Chevaux N PhD Graduated Primary
Corpus Mendoza A N PhD Graduated Primary
Mathew D MPhil Graduated  Primary
Rasheduzzaman M PhD Graduated  Primary
Sicre S B F M  PhD Graduated  Primary
Subramani N PhD Graduated Primary
Baltynov T PhD Graduated Secondary
Unni V  PhD Graduated Secondary

Links

Semiconductor and Quantum Technologies