David, John, Professor

Professor John David

PhD, BEng

School of Electrical and Electronic Engineering

Personal Chair

j.p.david@sheffield.ac.uk
+44 114 222 5185

Full contact details

Professor John David
School of Electrical and Electronic Engineering

Profile: I obtained my BEng and PhD degrees in Electronic Engineering from the University of Sheffield in 1979 and 1983, respectively.

After that, I undertook a number of postdoctoral positions within the Department of Electronic & Electrical Engineering at Sheffield eventually managing the characterisation activities of the SERC Centre for III–V Semiconductors.

In 2001 I left to join Marconi Optical Components, Caswell before returning the following year as a Senior Lecturer.

In 2004 I became Professor of Semiconductor Materials and Devices, and between 2009 to 2013 served as Head of Department. Between 2002 -2004 I was a IEEE LEOS Distinguished Lecturer and I am currently a Fellow of the IEEE and IET.

My research is focussed in two areas;

on the characterisation of III-V semiconductor materials and devices, especially that containing Bismuth and
on the understanding and development of avalanche photodiodes. The addition to Bismuth offers a possible route to extend the wavelength of many optical structures such as photodiodes and solar cells.
I use characterisation techniques such as X-ray double crystal diffraction and photoluminescence to study semiconductor structures containing bulk and quantum wells of GaAsBi and , and then correlate this to current-voltage, capacitance-voltage and photocurrent spectra of fabricated devices.

I also study how under very high electric-fields, electrons and holes in a semiconductor gain energy and create further carriers through a process of impact ionisation. This process can lead to destructive breakdown in power electronic devices but can also be utilised to amplify weak optical signals, giving rise to avalanche photodiodes (APDs).

I study the theory behind the ionisation process via different modelling techniques and also look experimentally at the ionisation coefficients in different semiconductor materials and device structures.

The aim of my research is to develop APDs capable of operating at very high speeds for next generation telecommunication networks and also APDs that are very sensitive.

Qualifications

PhD (Semiconductors), University of Sheffield 1983
BEng (Electronics), University of Sheffield 1976

Research interests

-Impact Ionisation and breakdown in semiconductors
Photodiode and avalanche photodiodes
Bismuth containing alloys

Publications

Journal articles

Harun F, Richards RD & David JPR (2025) . Journal of Physics: Conference Series, 3020.
Jin X, Zhao S, Craig AP, Tian Q, Gilder L, Yi X, Carmichael M, Golding T, Tan CH, Marshall ARJ & David JPR (2024) . Optica, 11(12), 1632-1638.
Liu Y, Jin X, Jung H, Lee S, Harun F, Ng JS, Krishna S & David JPR (2024) . Applied Physics Letters, 125(22).
Kirdoda J, Mirza M, Smith C, Dumas D, Coughlan C, McCarthy C, Mowbray H, Fleming F, Yi X, Saalbach L , Muir D et al (2024) . ECS Meeting Abstracts, MA2024-02(32), 2330-2330.
Tao X, Jin X, Gao S, Yi X, Liu Y, Rockett TBO, Bailey NJ, Harun F, Adham NA, Tan CH , Richards RD et al (2024) . ACS Photonics, 11(11), 4846-4853.
Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S (2024) . Communications Materials, 5(1).
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Huffaker DL, Tan CH & David JPR (2024) . Applied Physics Letters, 124(25).
Fleming F, Yi X, Mirza MMA, Jin X, Kirdoda J, Dumas DCS, Saalbach L, Modak M, Muir DAS, Smith C , Coughlan C et al (2024) . Optics Express, 32(11).
Ronningen TJ, Kodati SH, Jin X, Lee S, Jung H, Tao X, Lewis HIJ, Schwartz M, Gajowski N, Martyniuk P , Guo B et al (2023) . Applied Physics Letters, 123(13).
Jin X, Lewis HIJ, Yi X, Xie S, Liang B, Tian Q, Huffaker DL, Tan CH & David JPR (2023) . Optics Express, 31(20), 33141-33149.
Sreerag SJ, Sharma AS, Rockett TBO, David JPR, Richards RD & Kini RN (2023) . Applied Physics A, 129(8).
Campbell JC, David JPR & Bank SR (2023) . Photonics, 10(7).
Lewis HIJ, Jin X, Guo B, Lee S, Jung H, Kodati SH, Liang B, Krishna S, Ong DS, Campbell JC & David JPR (2023) . Scientific Reports, 13.
Jung H, Lee S, Liu Y, Jin X, David JPR & Krishna S (2023) . Applied Physics Letters, 122(22).
Singh R, O'Farrell T, Biagi M, Penty RV & David JPR (2023) . Journal of Lightwave Technology, 41(17), 5577-5587.
Batool Z, Hild K, Marko I, Mohmad AR, David JPR, Lu X, Tiedje T & Sweeney SJ (2023) . Journal of Materials Science: Materials in Electronics, 34(6).
Lee S, Jin X, Jung H, Lewis H, Liu Y, Guo B, Kodati SH, Schwartz M, Grein C, Ronningen TJ , David JPR et al (2023) . Optica, 10(2).
Lee HJ, Ali Gamel MM, Ker PJ, Jamaludin MZ, Wong YH, Yap KS, Willmott JR, Hobbs MJ, David JPR & Tan CH (2023) . Materials Science in Semiconductor Processing, 153, 107135-107135.
Bui T-C, Singh R, O'Farrell T, Scarano G, David JPR & Biagi M (2022) . Journal of Lightwave Technology, 40(22), 7254-7264.
Lee HJ, Gamel MMA, Ker PJ, Jamaludin MZ, Wong YH & David JPR (2022) . Journal of Electronic Materials, 51(11), 6082-6107.
Rockett TBO, Adham NA, Harun F, David JPR & Richards RD (2022) . Journal of Crystal Growth, 589.
Bailey NJ, Carr MR, David JPR & Richards RD (2022) . Journal of Nanomaterials, 2022.
Guo B, Jin X, Lee S, Ahmed SZ, Jones AH, Xue X, Liang B, Lewis HIJ, Kodati SH, Chen D , Ronningen TJ et al (2022) . Journal of Lightwave Technology, 40(14), 4758-4764.
Bailey NJ, Rockett TBO, Flores S, Reyes DF, David JPR & Richards RD (2022) . Scientific Reports, 12.
Ong DS, Tan AH, Choo KY, Yeoh KH & David JPR (2022) . Journal of Physics D: Applied Physics, 55(6), 065105-065105.
Jin X, Xie S, Liang B, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker DL, Tan CH , Ong DS et al (2022) . IEEE Journal of Selected Topics in Quantum Electronics, 28(2: Optical Detectors), 1-8.
Liu Y, Yi X, Bailey NJ, Zhou Z, Rockett TBO, Lim LW, Tan CH, Richards RD & David JPR (2021) . Nature Communications, 12(1).
Lewis HIJ, Qiao L, Cheong JS, Baharuddin ANAP, Krysa AB, Ng BK, Green JE & David JPR (2021) . IEEE Transactions on Electron Devices, 68(8), 4045-4050.
Richards RD, Harun F, Nawawi MRM, Liu Y, Rockett TBO & David JPR (2021) . Journal of Physics D: Applied Physics, 54(19).
Gamel MMA, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David JPR & Jamaludin MZ (2021) . Scientific Reports, 11(1).
Ahmed J, Xie S, Liang B, Yi X, Jin X, Kesaria M, David JPR & Huffaker DL (2021) . IEEE Journal of Quantum Electronics, 57(2), 1-6.
L. H, C. J, B. M, A. A, R. S, M.H. J, J.P.R. D & A.R. M (2020) . Sains Malaysiana, 49(10), 2559-2564.
Lim LW, Patil P, Marko I, Clarke EM, Sweeney S, Ng JS, David JPR & Tan CH (2020) . Semiconductor Science and Technology, 35(9).
Yi X, Xie S, Liang B, Lim LW, Cheong JS, Debnath MC, Huffaker DL, Tan CH & David JPR (2019) . Nature Photonics, 13(10), 683-686.
Flores S, Reyes DF, Braza V, Richards RD, Bastiman F, Ben T, Ruiz-Marín N, David JPR & González D (2019) . Applied Surface Science, 485, 29-34.
Hossain MM, David JPR & Hayat MM (2019) . Journal of Lightwave Technology, 37(13), 3315-3323.
Singh R, O’Farrell T, Biagi M & David JPR (2018) . Physical Communication, 31, 160-168.
Richards RD, Rockett TBO, Nawawi MRM, Harun F, Mellor A, Wilson T, Christou C, Chen S & David JPR (2018) . Semiconductor Science and Technology, 33(9).
Yi X, Xie S, Liang B, Lim LW, Zhou X, Debnath MC, Huffaker DL, Tan CH & David JPR (2018) . Scientific Reports, 8(1).
Qiao L, Dimler SJ, Baharuddin ANAP, Green JE & David JPR (2018) . Measurement Science and Technology, 29(6).
Wilson T, Hylton NP, Harada Y, Pearce P, Alonso-Álvarez D, Mellor A, Richards RD, David JPR & Ekins-Daukes NJ (2018) . Scientific Reports, 8(1).
Beling A, David J, Hutchinson M, Schow C & Shi J-W (2018) . IEEE Journal of Selected Topics in Quantum Electronics, 24(2), 1-3.
Richards RD, Mellor A, Harun F, Cheong JS, Hylton NP, Wilson T, Thomas T, Roberts JS, Ekins-Daukes NJ & David JPR (2017) . Solar Energy Materials and Solar Cells, 172, 238-243.
Hossain MM, Ray S, Cheong JS, Qiao L, Baharuddin ANAP, Hella MM, David JPR & Hayat MM (2017) . Journal of Lightwave Technology, 35(11), 2315-2324.
Cheong JS, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2017) . Solar Energy Materials and Solar Cells, 164, 28-31.
Xie S, Kim H, Lee W-J, Farrell AC, David JP & Huffaker DL (2016) . Nano Advances.
Jamil E, Cheong JS, David JPR & Hayat MM (2016) . Optics Express, 24(19), 21597-21608.
Zhou X, Zhang S, David J, Ng JS & Tan CH (2016) . IEEE Photonics Technology Letters, 28(22), 2495-2498.
Balanta MAG, Kopaczek J, Orsi Gordo V, Santos BHB, Rodrigues AD, Galeti HVA, Richards RD, Bastiman F, David JPR, Kudrawiec R & Galvão Gobato Y (2016) . Journal of Physics D: Applied Physics, 49(35).
David J (2016) . Nature Photonics, 10(6), 364-366.
Auckloo A, Cheong JS, Meng X, Tan CH, Ng JS, Krysa AB, Tozer RC & David JPR (2016) . Journal of Instrumentation, 11(3).
White BS, Sandall I, Zhou X, Krysa AB, McEvan K, David J & Tan C (2016) . Journal of Lightwave Technology, 34(11).
Qiao L, Cheong JS, Ong JSL, Ng JS, Krysa AB, Green JE & David JPR (2015) . IEEE Photonics Technology Letters, 28(4), 481-484.
Cheong JS, Ng JS, Krysa AB, Ong JSL & David JPR (2015) . Journal of Physics D: Applied Physics, 48(40).
Thomas T, Mellor A, Hylton NP, Führer M, Alonso-Álvarez D, Braun A, Ekins-Daukes NJ, David JPR & Sweeney SJ (2015) . Semiconductor Science and Technology, 30(9), 094010-094010.
White BS, Sandall IC, David JPR & Tan CH (2015) . IEEE Transactions on Electron Devices, 62(9), 2928-2932.
Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D & David JPR (2015) . Journal of Crystal Growth, 425, 237-240.
Mohmad AR, Bastiman F, Hunter CJ, Harun F, Reyes DF, Sales DL, Gonzalez D, Richards RD, David JPR & Majlis BY (2015) . Semiconductor Science and Technology, 30(9), 094018-094018.
Richards RD, Bastiman F, Walker D, Beanland R & David JPR (2015) . Semiconductor Science and Technology, 30(9), 094013-094013.
Kopaczek J, Linhart WM, Baranowski M, Richards RD, Bastiman F, David JPR & Kudrawiec R (2015) . Semiconductor Science and Technology, 30(9), 094005-094005.
Zhou Z, Mendes DF, Richards RD, Bastiman F & David JPR (2015) . Semiconductor Science and Technology, 30(9), 094004-094004.
Jeng Shiuh Cheong , Hayat MM, Xinxin Zhou & David JPR (2015) . IEEE Transactions on Electron Devices, 62(6), 1946-1952.
Hobbs MJ, Tan CH, Zhou X, David JPR, Willmott JR, Plis E & Krishna S (2015) . IEEE Transactions on Instrumentation and Measurement, 64(2), 502-508.
Kudrawiec R, Kopaczek J, Polak MP, Scharoch P, Gladysiewicz M, Misiewicz J, Richards RD, Bastiman F & David JPR (2014) . Journal of Applied Physics, 116(23).
Meng X, Tan CH, Dimler S, David JPR & Ng JS (2014) . Optics Express, 22(19), 22608-22615.
Singh R, O'Farrell T & David J (2014) An Enhanced Colour Shift Keying Modulation Scheme for High Speed Wireless Visible Light Communications. Journal of Lightwave Technology, 32(14), 2582-2592.
Mohmad AR, Bastiman F, Hunter CJ, Richards RD, Sweeney SJ, Ng JS, David JPR & Majlis BY (2014) . Physica Status Solidi B Basic Research, 251(6), 1276-1281.
Sandall IC, Bastiman F, White B, Richards R, Mendes D, David JPR & Tan CH (2014) . Applied Physics Letters, 104(17).
Cheong JS, Ong J, Ng JS, Krysa A & David JP (2014) . IEEE Journal of Selected Topics in Quantum Electronics, 20(6), 142-146.
Gomes RB, Tan CH, Meng X, David JPR & Ng JS (2014) . Journal of Instrumentation, 9.
Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS & David JPR (2014) . Journal of Crystal Growth, 390, 120-124.
Zhou X, Hobbs MJ, White BS, David JPR, Willmott JR & Tan CH (2014) . IEEE Transactions on Electron Devices, 61(3), 838-843.
Ong JSL, Ng JS, Krysa AB & David JPR (2014) . JOURNAL OF APPLIED PHYSICS, 115(6).
El-Howayek G, Zhang C, Li Y, Ng JS, David JPR & Hayat MM (2014) . IEEE PHOTONICS JOURNAL, 6(1).
Reyes DF, Bastiman F, Hunter CJ, Sales DL, Sanchez AM, David JPR & González D (2014) . Nanoscale Research Letters, 9(1), 1-8.
Reyes DF, Gonzalez D, Bastiman F, Dominguez L, Hunter CJ, Guerrero E, Roldan MA, Mayoral A, David JPR & Sales DL (2013) . APPLIED PHYSICS EXPRESS, 6(4).
Dominguez L, Reyes DF, Bastiman F, Sales DL, Richards RD, Mendes D, David JPR & Gonzalez D (2013) . APPLIED PHYSICS EXPRESS, 6(11).
Tan SL, Soong WM, Green JE, Steer MJ, Zhang S, Tan LJJ, Ng JS, Marko IP, Sweeney SJ, Adams AR , Allam J et al (2013) . Applied Physics Letters, 103(10).
Sandall IC, Ng JS, David JPR, Liu H & Tan CH (2013) . Semiconductor Science and Technology, 28(9).
Richards R, Bastiman F, Hunter CJ, Mohmad AR, David JPR & Ekins-Daukes N (2013) . Conference Record of the IEEE Photovoltaic Specialists Conference, 303-305.
Ker PJ, David JPR & Tan CH (2012) . Optics Express, 20(28), 29568-29576.
Hunter CJ, Bastiman F, Mohmad AR, Richards R, Ng JS, Sweeney SJ & David JPR (2012) . IEEE Photonics Technology Letters, 24(23), 2191-2194.
Marshall ARJ, Nunna K, Tan SL, Reyner CJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) . Proceedings of SPIE the International Society for Optical Engineering, 8541.
Green JE, David JPR & Tozer RC (2012) . Measurement Science and Technology, 23(12).
Green JE, Tozer RC & David JPR (2012) . IEEE Transactions on Circuits and Systems.
Mohmad AR, Bastiman F, Hunter CJ, Richards R, Sweeney SJ, Ng JS & David JPR (2012) . Applied Physics Letters, 101(1).
Sandall I, Ng JS, David JPR, Tan CH, Wang T & Liu H (2012) . Optics Express, 20(10), 10446-10452.
Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) . IEEE Transactions on Electron Devices, 59(4), 1030-1036.
Ivanov T, Donchev V, Germanova K, Tellaleva T, Borissov K, Hongpinyo V, Vines P, David JPR & Ooi BS (2012) . Journal of Physics Conference Series, 356(1).
Green JE, Loh WS, Marshall ARJ, Ng BK, Tozer RC, David JPR, Soloviev SI & Sandvik PM (2012) Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement. IEEE Transactions on Electron Devices.
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2012) . IEEE Transactions on Electron Devices, 59(4), 1063-1067.
Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM. Journal of Crystal Growth.
Nunna KC, Tan SL, Reyner CJ, Marshall ARJ, Liang B, Jallipalli A, David JPR & Huffaker DL (2012) . IEEE Photonics Technology Letters, 24(3), 218-220.
Tan SL, Hunter CJ, Zhang S, Tan LJJ, Goh YL, Ng JS, David JPR, Marko IP, Sweeney SJ, Adams AR & Allam J (2012) . Journal of Electronic Materials, 1-9.
Bastiman F, Cullis AG, David JPR & Sweeney SJ (2012) . Journal of Crystal Growth, 341(1), 19-23.
Ker PJ, Marshall ARJ, David JPR & Tan CH (2012) . Physica Status Solidi C Current Topics in Solid State Physics, 9(2), 310-313.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2012) . Physica Status Solidi C Current Topics in Solid State Physics, 9(2), 259-261.
Bastiman F, Mohmad ARB, Ng JS, David JPR & Sweeney SJ (2011) Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. Journal of Crystal Growth.
Hasbullah NF & David JPR (2011) . 2011 IEEE Regional Symposium on Micro and Nanoelectronics Rsm 2011 Programme and Abstracts, 32-35.
Gomes RB, Tan CH, Ker PJ, David JPR & Ng JS (2011) . Journal of Instrumentation, 6(12).
Marshall ARJ, Ker PJ, Krysa A, David JPR & Tan CH (2011) . Opt Express, 19(23), 23341-23349.
Ong JSL, Ng JS, Krysa AB & David JPR (2011) . IEEE Electron Device Letters, 32(11), 1528-1530.
Ong JSL, Ng JS, Krysa AB & David JPR (2011) Impact Ionization Coefficients in Al0.52In0.48P. IEEE Electron Device Letters.
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2011) . IEEE J QUANTUM ELECT, 47(8), 1123-1128.
Mohmad AR, Bastiman F, Hunter CJ, Ng JS, Sweeney SJ & David JPR (2011) . APPL PHYS LETT, 99(4).
Hasbullah NF, David JPR & Mowbray DJ (2011) . Aip Conference Proceedings, 1328, 136-138.
Hasbullah NF, David JPR & Mowbray DJ (2011) . J APPL PHYS, 109(11).
Tan SL, Zhang SY, Soong WM, Goh YL, Tan LJJ, Ng JS, David JPR, Marko IP, Adams AR, Sweeney SJ & Allam J (2011) . IEEE ELECTR DEVICE L, 32(7), 919-921.
Marshall ARJ, Vines P, Ker PJ, David JPR & Tan CH (2011) . IEEE J QUANTUM ELECT, 47(6), 858-864.
Tan CH, Vines P, Hobbs M, Anderson B, Hugues M & David J (2011) . Infrared Physics and Technology, 54(3), 228-232.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2011) . IEEE J QUANTUM ELECT, 47(5), 607-613.
Tan CH, Gomes RB, David JPR, Barnett AM, Bassford DJ, Lees JE & Ng JS (2011) . IEEE T ELECTRON DEV, 58(6), 1696-1701.
Mohmad AR, Bastiman F, Ng JS, Sweeney SJ & David JPR (2011) . APPL PHYS LETT, 98(12).
Ong DSG, Hayat MM, David JPR & Ng JS (2011) . IEEE Photonics Technology Letters, 23(4), 233-235.
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2011) . IEEE Journal of Quantum Electronics, 47(2), 190-197.
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, Babazadeh N, Gomes RB, Vines P, David JPR, McKeag RD & Boe D (2011) . Journal of Instrumentation, 6(12).
Ong DSG, Ng JS, Goh YL, Tan CH, Zhang S & David JPR (2011) . IEEE Transactions on Electron Devices, 58(2), 486-489.
Tan LJJ, Soong WM, David JPR & Ng JS (2011) . IEEE Transactions on Electron Devices, 58(1), 103-106.
Hasbullah NF, Hopkinson M, Alexander RR, Hogg RA, David JPR, Badcock TJ & Mowbray DJ (2010) . IEEE Journal of Quantum Electronics, 46(12), 1847-1853.
Marshall ARJ, David JPR & Tan CH (2010) . IEEE Transactions on Electron Devices, 57(10), 2631-2638.
Barnett AM, Bassford DJ, Lees JE, Ng JS, Tan CH & David JPR (2010) . NUCL INSTRUM METH A, 621(1-3), 453-455.
Rees GJ & David JPR (2010) . Journal of Physics D Applied Physics, 43(24).
Tan LJJ, Ong DSG, Ng JS, Tan CH, Jones SK, Qian YH & David JPR (2010) . IEEE J QUANTUM ELECT, 46(8), 1153-1157.
Mun SCLT, Tan CH, Dimler SJ, Tan LJJ, Ng JS, Goh YL & David JPR (2009) . IEEE J QUANTUM ELECT, 45(5-6), 566-571.
Sanchez AM, Beanland R, Hasbullah NF, Hopkinson M & David JPR (2009) . J APPL PHYS, 106(2).
Ong DSG, Ng JS, Hayat MM, Sun P & David JPR (2009) . J LIGHTWAVE TECHNOL, 27(15), 3294-3302.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2009) . IEEE PHOTONIC TECH L, 21(13), 866-868.
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ & Mowbray DJ (2009) . IEEE J QUANTUM ELECT, 45(1-2), 79-85.
Loh WS, Goh EZJ, Vassilevski K, Nikitina I, David JPR, Wright NG & Johnson CM (2008) . Materials Research Society Symposium Proceedings, 1069, 245-250.
Beanland R, David JPR & Sanchez AM (2008) . Journal of Applied Physics, 104(12).
Tan LJJ, Ng JS, Tan CH & David JPR (2008) . IEEE J QUANTUM ELECT, 44(3-4), 378-382.
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . APPL PHYS LETT, 93(11).
Lees JE, Bassford DJ, Ng JS, Tan CH & David JPR (2008) . NUCL INSTRUM METH A, 594(2), 202-205.
Loh WS, Ng BK, Ng JS, Soloviev SI, Cha HY, Sandvik PM, Johnson CM & David JPR (2008) . IEEE T ELECTRON DEV, 55(8), 1984-1990.
Mun SCLT, Tan CH, Goh YL, Marshall ARJ & David JPR (2008) . J APPL PHYS, 104(1).
David JPR & Tan CH (2008) . IEEE J SEL TOP QUANT, 14(4), 998-1009.
Buller GS, Warburton RE, Pellegrini S, Ng JS, David JPR, Tan LJJ, Krysa AB & Cova S (2007) . IET OPTOELECTRONICS, 1(6), 249-254.
Groves C & David JPR (2007) . IEEE Trans. Commun., 55, 2033-2033.
Aivaliotis P, Vukmirovic N, Zibik EA, Cockburn JW, Indjin D, Harrison P, Groves C, David JPR, Hopkinson M & Wilson LR (2007) . J PHYS D APPL PHYS, 40(18), 5537-5540.
Tan LJJ, Ng JS, Tan CH, Hopkinson M & David JPR (2007) . IEEE T ELECTRON DEV, 54(8), 2051-2054.
Tan CH, Ng JS, Rees GJ & David JPR (2007) . IEEE J SEL TOP QUANT, 13(4), 906-910.
Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M, David JPR, Jones SK, Button CC & Pinches SM (2007) . IEEE J QUANTUM ELECT, 43(5-6), 503-507.
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ & Adams AR (2007) . J APPL PHYS, 101(6).
Lau KS, Tozer RC, David JPR, Hopkinson M, Rees GJ, Carr M, Priestley N, Teoh YP & Dunn GM (2007) . SEMICOND SCI TECH, 22(3), 245-248.
Ng JS, Tan CH, Rees GJ & David JPR (2007) . J MOD OPTIC, 54(2-3), 353-360.
Groves C & David JPR (2007) . IEEE T COMMUN, 55(11), 2152-2158.
Dimler SJ, Ng JS, Tozer RC, Rees GJ & David JPR (2007) . IEEE J SEL TOP QUANT, 13(4), 919-925.
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK, Rees GJ, Hopkinson A, David JPR & Jones SK (2007) . IEEE T ELECTRON DEV, 54(1), 11-16.
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors.
Ng JS, Liu HY, Steer MJ, Hopkinson M & David JPR (2006) . MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
Lau KS, Tan CH, Ng BK, Li KF, Tozer RC, David JPR & Rees GJ (2006) . MEAS SCI TECHNOL, 17(7), 1941-1946.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) . IEEE J QUANTUM ELECT, 42(3-4), 397-403.
Liu HY, Steer MJ, Badcock TJ, Mowbray DJ, Skolnick MS, Suarez F, Ng JS, Hopkinson M & David JPR (2006) . J APPL PHYS, 99(4).
Bai J, Wang T, Comming P, Parbrook PJ, David JPR & Cullis AG (2006) . J APPL PHYS, 99(2).
Groves C & David JPR (2006) . Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 859-860.
Massey DJ, David JPR & Rees GJ (2006) . IEEE Transactions on Electron Devices, 53(9), 2328-2334.
David JPR (2005) . Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 2005, 369-370.
Goh YL, Ng JS, Tan CH, Ng WK & David JPR (2005) . IEEE PHOTONIC TECH L, 17(11), 2412-2414.
Ng JS, Tan CH, David JPR & Rees GJ (2005) . IEEE J QUANTUM ELECT, 41(8), 1092-1096.
Groves C, Tan CH, David JPR, Rees GJ & Hayat MM (2005) . IEEE T ELECTRON DEV, 52(7), 1527-1534.
Wang T, Raviprakash G, Ranalli F, Harrison CN, Bai J, David JPR, Parbrook PJ, Ao JP & Ohno Y (2005) . J APPL PHYS, 97(8).
Liu HY, Soong WM, Navaretti P, Hopkinson M & David JPR (2005) . APPL PHYS LETT, 86(6).
Massey DJ, David JPR & Rees GJ (2005) . Proceedings of Essderc 2005 35th European Solid State Device Research Conference, 2005, 245-248.
Groves C, Chia CK, Tozer RC, David JPR & Rees GJ (2005) . IEEE J QUANTUM ELECT, 41(1), 70-75.
Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2004) Establishing MOVPE growth of InAs/GaAs quantum dots in a commercial 8×3″ multiwafer reactor for optoelectronic applications. Design and Nature, 6, 107-110.
Groves C, David JPR & Rees GJ (2004) Gain dependent avalanche duration and gain×bandwidth product in an avalanche photodiode. Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices Nusod 04, 30-31.
Groves C, Harrison CN, David JPR & Rees GJ (2004) . Journal of Applied Physics, 96(9), 5017-5019.
Groves C, David JPR, Robson PN & Rees GJ (2004) . Proceedings of SPIE the International Society for Optical Engineering, 5451, 426-433.
Liu HY, Sellers IR, Gutierrez M, Groom KM, Soong WM, Hopkinson M, David JPR, Beanland R, Badcock TJ, Mowbray DJ & Skolnick MS (2004) . J APPL PHYS, 96(4), 1988-1992.
Liu HY, Sellers IR, Badcock TJ, Mowbray DJ, Skolnick MS, Groom KM, Gutierrez M, Hopkinson M, Ng JS, David JPR & Beanland R (2004) . APPL PHYS LETT, 85(5), 704-706.
Groves C, David JPR, Rees GJ & Ong DS (2004) . Journal of Applied Physics, 95(11 I), 6245-6251.
Massey DJ, David JPR, Tan CH, Ng BK, Rees GJ, Robbins DJ & Herbert DC (2004) . J APPL PHYS, 95(10), 5931-5933.
Hambleton PJ, David JPR & Rees GJ (2004) . Journal of Applied Physics, 95(7), 3561-3564.
Tan CH, Rees GJ, Houston PA, Ng JS, Ng WK & David JPR (2004) . APPL PHYS LETT, 84(13), 2322-2324.
Hogg R, Groom KM, Liu HY, Sellers IR, Ray SK, Badcock T, Gutierrez M, Hopkinson M, Ng JS, R. David JP , Mowbray DJ et al (2004) . Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS & David JPR (2003) . APPL PHYS LETT, 83(24), 4951-4953.
David J (2003) Low Noise Avalanche Photodiodes. Conference on Optical Fiber Communication Technical Digest Series, 86, 336-337.
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. Institute of Physics Conference Series, 174, 263-266.
Ng WK, Tan CH, David JPR, Houston PA, Yee M & Ng JS (2003) . APPL PHYS LETT, 83(14), 2820-2822.
Groves C, Ghin R, David JPR & Rees GJ (2003) . IEEE Transactions on Electron Devices, 50(10), 2027-2031.
Yee M, Ng WK, David JPR, Houston PA, Tan CH & Krysa A (2003) . IEEE T ELECTRON DEV, 50(10), 2021-2026.
Chia CK, Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M, Airey RJ & Robson PN (2003) . J APPL PHYS, 94(4), 2631-2637.
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2003) . IEEE T ELECTRON DEV, 50(8), 1724-1732.
Rees GJ & David JPR (2003) . Proceedings of SPIE the International Society for Optical Engineering, 4999, 349-362.
Tan CH, Ghin R, David JPR, Rees GJ & Hopkinson M (2003) The effect of dead space on gain and excess noise in In0.48Ga0.52P p(+)in(+) diodes. SEMICOND SCI TECH, 18(8), 803-806.
Groves C, David JPR & Rees GJ (2003) . Semiconductor Science and Technology, 18(7), 689-692.
Hambleton PJ, Plimmer SA, David JPR & Rees GJ (2003) . IEE Proceedings Optoelectronics, 150(2), 167-170.
Ong DS, Rees GJ & David JPR (2003) . Journal of Applied Physics, 93(7), 4232-4239.
Ng JS, Tan CH, David JPR, Hill G & Rees GJ (2003) . IEEE T ELECTRON DEV, 50(4), 901-905.
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) . IEE PROCEEDINGS-OPTOELECTRONICS, 150(2), 187-190.
Yee M, Ng WK, David JPR, Houston PA & Harrison CN (2003) . APPL PHYS LETT, 82(8), 1224-1226.
Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2003) . IEEE Transactions on Electron Devices, 50(2), 347-351.
Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC & Weiner M (2003) Demonstration of 4H-SiC avalanche photodiodes linear array. SOLID-STATE ELECTRONICS, 47(2), 241-245.
Tan CH, Hambleton PJ, David JPR, Tozer RC & Rees GJ (2003) . J LIGHTWAVE TECHNOL, 21(1), 155-159.
Harrison CN, David JPR, Hopkinson M & Rees GJ (2002) . J APPL PHYS, 92(12), 7684-7686.
Hambleton PJ, Ng BK, Plimmer SA, David JPR & Rees GJ (2002) Non-equilibrium modelling of avalanche photodiode speed. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 2, 490-491.
Ng BK, David JPR, Rees GJ, Tozer RC, Hopkinson M & Airey RJ (2002) . IEEE T ELECTRON DEV, 49(12), 2349-2351.
Ng JS, Tan CH, David JPR & Rees GJ (2002) A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
Ng BK, Yan F, David JPR, Tozer RC, Rees GJ, Qin C & Zhao JH (2002) . IEEE PHOTONIC TECH L, 14(9), 1342-1344.
Jacob B, Robson PN, David JPR & Rees GJ (2002) . Journal of Applied Physics, 91(8), 5438-5441.
Ng JS, David JPR, Rees GJ & Allam J (2002) . J APPL PHYS, 91(8), 5200-5202.
Ng JS, Tan CH, Ng BK, Hambleton PJ, David JPR, Rees GJ, You AH & Ong DS (2002) Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
Ng BK, David JPR, Tozer RC, Hopkinson M, Hill G & Rees GJ (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE PHOTONIC TECH L, 14(4), 522-524.
Yan F, Qin C, Zhao JH, Weiner M, Ng BK, David JPR & Tozer RC (2002) . ELECTRON LETT, 38(7), 335-336.
Hambleton PJ, Plimmer SA, David JPR, Rees GJ & Dunn GM (2002) . Journal of Applied Physics, 91(3), 2107-2111.
Yee M, Houston PA & David JPR (2002) Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor. J APPL PHYS, 91(3), 1601-1605.
Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO, 131-136.
David JPR & Rees GJ (2001) Low noise avalanche photodiodes. Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS, 2, 693-694.
Ng BK, David JPR, Plimmer SA, Tozer RC, Rees GJ & Hopkinson M (2001) . IEE P-OPTOELECTRON, 148(5-6), 243-246.
Ng BK, David JPR, Plimmer SA, Rees GJ, Tozer RC, Hopkinson M & Hill G (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE T ELECTRON DEV, 48(10), 2198-2204.
Tan CH, David JPR, Rees GJ, Tozer RC & Herbert DC (2001) Treatment of soft threshold in impact ionization. J APPL PHYS, 90(5), 2538-2543.
Jacob B, Robson PN, David JPR & Rees GJ (2001) Fokker-Planck model for nonlocal impact ionization in semiconductors. J APPL PHYS, 90(3), 1314-1317.
Tan CH, David JPR, Plimmer SA, Rees GJ, Tozer RC & Grey R (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE T ELECTRON DEV, 48(7), 1310-1317.
Plimmer SA, David JPR, Jacob B & Rees GJ (2001) . Journal of Applied Physics, 89(5), 2742-2751.
Ng BK, David JPR, Plimmer SA, Hopkinson M, Tozer RC & Rees GJ (2000) Impact ionization coefficients of Al0.8Ga0.2As. APPL PHYS LETT, 77(26), 4374-4376.
Plimmer SA, David JPR & Ong DS (2000) . IEEE Transactions on Electron Devices, 47(5), 1080-1088.
Flimmer SA, David JPR, Grey R & Rees GJ (2000) . IEEE Transactions on Electron Devices, 47(5), 1089-1097.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Plimmer SA, Chang KY & Roberts JS (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE T ELECTRON DEV, 47(5), 910-914.
Chia CK, David JPR, Plimmer SA, Rees GJ, Grey R & Robson PN (2000) Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures. J APPL PHYS, 88(5), 2601-2608.
Tan CH, Clark JC, David JPR, Rees GJ, Plimmer SA, Tozer RC, Herbert DC, Robbins DJ, Leong WY & Newey J (2000) Avalanche noise measurement in thin Si p(+)-i-n(+) diodes. APPL PHYS LETT, 76(26), 3926-3928.
Plimmer SA, David JPR, Rees GJ & Robson PN (2000) . Semiconductor Science and Technology, 15(7), 692-699.
Ong DS, Li KF, Plimmer SA, Rees GJ, David JPR & Robson PN (2000) . Journal of Applied Physics, 87(11), 7885-7891.
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA , Hopkinson M et al (2000) . Phys Rev Lett, 84(4), 733-736.
Flimmer SA, David JPR, Ong DS & Li KF (1999) . IEEE Transactions on Electron Devices, 46(4), 769-775.
David JPR, Khoo EA, Pabla AS, Woodhead J, Grey R & Rees GJ (1999) . Proceedings of SPIE the International Society for Optical Engineering, 3896, 163-170.
Plimmer SA, Tan CH, David JPR, Grey R, Li KF & Rees GJ (1999) The effect of an electric-field gradient on avalanche noise. APPL PHYS LETT, 75(19), 2963-2965.
Dunn GM, Ghin R, Rees GJ, David JPR, Plimmer S & Herbert DC (1999) . Semiconductor Science and Technology, 14(11), 994-1000.
Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1999) . Applied Physics Letters, 75(13), 1929-1931.
Li KF, Plimmer SA, David JPR, Tozer RC, Rees GJ, Robson PN, Button CC & Clark JC (1999) Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication. IEEE PHOTONIC TECH L, 11(3), 364-366.
Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1999) . IEE Proceedings Optoelectronics, 146(1), 62-66.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1999) Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors. IEE P-OPTOELECTRON, 146(1), 21-24.
Khoo EA, Woodhead J, David JPR, Grey R & Rees GJ (1999) . Electronics Letters, 35(2), 150-152.
Roberts JS, David JPR, Smith L & Tihanyi PL (1998) . Journal of Crystal Growth, 195(1-4), 668-675.
Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) . IEEE Transactions on Electron Devices, 45(8), 1804-1810.
Ghin R, David JPR, Plimmer SA, Hopkinson M, Rees GJ, Herbert DC & Wight DR (1998) Avalanche multiplication and breakdown in Ga0.52In0.48P diodes. IEEE T ELECTRON DEV, 45(10), 2096-2101.
Li KF, Ong DS, David JPR, Rees GJ, Tozer RC, Robson PN & Grey R (1998) Avalanche multiplication noise characteristics in thin GaAs p(+)-i-n(+) diodes. IEEE T ELECTRON DEV, 45(10), 2102-2107.
Flitcroft RM, David JPR, Houston PA & Button CC (1998) Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors. IEEE T ELECTRON DEV, 45(6), 1207-1212.
Chia CK, David JPR, Rees GJ, Plimmer SA, Grey R & Robson PN (1998) . Journal of Applied Physics, 84(8), 4363-4369.
Ong DS, Li KF, Rees GJ, David JPR & Robson PN (1998) . Journal of Applied Physics, 83(6), 3426-3428.
Lye BC, Houston PA, Button CC & David JPR (1998) Electrical and optical characterisation of heavily doped GaAs : C bases of heterojunction bipolar transistors. SOLID STATE ELECTRON, 42(1), 115-120.
Ong DS, Li KF, Rees GJ, David JPR, Robson PN & Dunn GM (1998) . Applied Physics Letters, 72(2), 232-234.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Robson PN & Grey R (1998) Low excess noise characteristics in thin avalanche region GaAs diodes. ELECTRON LETT, 34(1), 125-126.
Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) InGaAs/GaAs piezoelectric lasers. Conference on Lasers and Electro Optics Europe Technical Digest, 95.
Yow HK, Houston PA, Button CC, David JPR & Ng CMS (1998) Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors. J ELECTRON MATER, 27(1), 17-23.
Dunn GM, Rees GJ & David JPR (1997) . Semiconductor Science and Technology, 12(9), 1147-1153.
Dunn GM, Rees GJ & David JPR (1997) . Semiconductor Science and Technology, 12(6), 692-697.
Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1997) . Semiconductor Science and Technology, 12(1), 111-120.
Chia CK, David JPR, Rees GJ, Robson PN, Plimmer SA & Grey R (1997) . Applied Physics Letters, 71(26), 3877-3879.
Plimmer SA, David JPR & Dunn GM (1997) . IEEE Transactions on Electron Devices, 44(4), 659-663.
Lidzey DG, Bradley DDC, Pate MA, David JPR, Whittaker DM, Fisher TA & Skolnick MS (1997) Mapping the confined optical field in a microcavity via the emission from a conjugated polymer. APPL PHYS LETT, 71(6), 744-746.
Plimmer SA, David JPR, Rees GJ, Grey R, Herbert DC, Wight DR & Higgs AW (1997) . Journal of Applied Physics, 82(3), 1231-1235.
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ & Robson PN (1997) Impact ionization coefficients in GaInP p-i-n diodes. APPL PHYS LETT, 70(26), 3567-3569.
Wilson LR, Mowbray DJ, Skolnick MS, Astratov VN, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in InxGa1-xAs-GaAs piezoelectric quantum wells. PHYS REV B, 55(24), 16045-16048.
Khoo EA, Pabla AS, Woodhead J, David JPR, Grey R & Rees GJ (1997) . Electronics Letters, 33(11), 957-958.
Dunn GM, Rees GJ & David JPR (1997) . Electronics Letters, 33(7), 639-640.
Dunn GM, Rees GJ & David JPR (1997) . Electronics Letters, 33(4), 337-339.
Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) . IEEE Photonics Technology Letters, 9(2), 143-145.
Valtueña JF, Izpura I, Sánchez-Rojas JL, Muñoz E, Khoo EA, David JPR, Woodhead J, Grey R & Rees GJ (1997) . Microelectronics Journal, 28(8-10), 757-765.
Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1997) . Journal of Crystal Growth, 170(1-4), 399-403.
Chen YH, Wilkinson CI, Woodhead J, David JPR, Button CC & Robson PN (1997) . Journal of Crystal Growth, 170(1-4), 394-398.
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allam J (1997) Breakdown characteristics of (AlxGa1-x)0.52In0.48P p-i-n diodes. IEEE International Conference on Semiconductor Electronics Proceedings ICSE, 256-260.
Roberts JS, David JPR, Chen YH & Sale TE (1997) . Journal of Crystal Growth, 170(1-4), 621-625.
Martin RW, McGow FJ, Hopkinson M & David JPR (1997) Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells. SUPERLATTICE MICROST, 22(4), 517-520.
Wilson LR, Mowbray DJ, Skolnick MS, Peggs DW, Rees GJ, David JPR, Grey R, Hill G & Pate MA (1997) Electrical and optical bistability in [111]GaInAs-GaAs piezo-electric quantum wells. SUPERLATTICE MICROST, 21(1), 113-118.
Kinder D, Nicholas RJ, Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G (1996) Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields. SEMICOND SCI TECH, 11(1), 34-38.
Mazzer M, Grünbaum E, Barnham KWJ, Barnes J, Griffin PR, Holt DB, Hutchison JL, Norman AG, David JPR, Roberts JS & Grey R (1996) . Materials Science and Engineering B, 42(1-3), 43-51.
Dunn GM, Rees GJ, David JPR, Plimmer SA & Herbert DC (1996) . IEEE Transactions on Electron Devices, 43(12), 2303-2305.
Griffin PR, Barnes J, Barnham KWJ, Haarpaintner G, Mazzer M, Zanotti-Fregonara C, Grünbaum E, Olson C, Rohr C, David JPR , Roberts JS et al (1996) . Journal of Applied Physics, 80(10), 5815-5820.
Kowalski OP, Wegerer RM, Mowbray DJ, Skolnick MS, Button CC, Roberts JS, Hopkinson M, David JPR & Hill G (1996) Optical spectroscopic observation of spontaneous long range ordering in AlGaInP. APPL PHYS LETT, 68(23), 3266-3268.
Sale TE, Roberts JS, Woodhead J, David JPR & Robson PN (1996) . IEEE Photonics Technology Letters, 8(4), 473-475.
Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1996) . Applied Physics Letters, 68(12), 1595-1597.
Chen YH, Wilkinson CI, Woodhead J, Button CC, David JPR, Pate MA & Robson PN (1996) . Electronics Letters, 32(6), 559-560.
David JPR, Sale TE, Pabla AS, RodriguezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN, Skolnick MS & Hogg RA (1996) Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures. APPL PHYS LETT, 68(6), 820-822.
Plimmer SA, David JPR, Herbert DC, Lee TW, Rees GJ, Houston PA, Grey R, Robson PN, Higgs AW & Wight DR (1996) Investigation of impact ionization in thin GaAs diodes. IEEE T ELECTRON DEV, 43(7), 1066-1072.
Pabla AS, Woodhead J, Khoo EA, Grey R, David JPR & Rees GJ (1995) Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration. Applied Physics Letters, 1595.
DAVID JPR, HOPKINSON M, STAVRINOU PN & HAYWOOD SK (1995) GROWTH OF INASXP1-X/INP MULTIQUANTUM-WELL STRUCTURES BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. J APPL PHYS, 78(5), 3330-3334.
David JPR, Chen YH, Grey R, Hill G, Robson PN & Kightley P (1995) . Applied Physics Letters, 67, 906.
David JPR, Allam J, Adams AR, Roberts JS, Grey R, Rees GJ & Robson PN (1995) . Applied Physics Letters, 2876.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. Conference Proceedings International Conference on Indium Phosphide and Related Materials, 299-302.
Hopkinson M, David JPR, Khoo EA, Pabla AS, Woodhead J & Rees GJ (1995) InxGa1-xAs/InP quantum well structures grown on [111]B InP. MICROELECTR J, 26(8), 805-810.
Grey R, David JPR, Hill G, Pabla AS, Pate MA, Rees GJ, Robson PN, RodriguezGirones PJ, Sale TE, Woodhead J , Fisher TA et al (1995) Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices. MICROELECTR J, 26(8), 811-820.
ROBERTS JS & DAVID JPR (1994) HIGH-PURITY ALGAAS FROM METHYL-BASED PRECURSORS USING IN-SITU GETTERING OF ALKOXIDES. J CRYST GROWTH, 145(1-4), 968-969.
Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Reddy M, Hill G & Sánchez-Dehesa J (1994) . Journal of Applied Physics, 76(10), 5931-5944.
SALE TE, WOODHEAD J, REES GJ, GREY R, DAVID JPR, PABLA AS, RODRIGUEZGIRONES PJ, ROBSON PN, HOGG RA & SKOLNICK MS (1994) CARRIER SCREENING EFFECTS IN PIEZOELECTRIC STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN ON THE [111]B AXIS. J APPL PHYS, 76(9), 5447-5452.
Roberts JS, David JPR, Sale TE & Tihanyi PL (1994) . Journal of Crystal Growth, 143(3-4), 135-140.
PABLA AS, HOPKINSON M, DAVID JPR, KHOO EA & REES GJ (1994) ELECTROABSORPTION MODULATION IN STRAINED PIEZOELECTRIC INGAAS/INP MULTIQUANTUM WELLS OPERATING AT LAMBDA-SIMILAR-OR-EQUAL-TO-1.55 MU-M. ELECTRON LETT, 30(20), 1707-1708.
Pabla AS, Woodhead J, Grey R, Rees GJ, David JPR, Pate MA & Robson PN (1994) . Electronics Letters, 30(18), 1521-1522.
DAVID JPR, GREY R, REES GJ, PABLA AS, SALE TE, WOODHEAD J, SANCHEZROJAS JL, PATE MA, HILL G, ROBSON PN , HOGG RA et al (1994) GROWTH AND CHARACTERIZATION OF (111)B INGAAS/GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES. J ELECTRON MATER, 23(9), 975-982.
Dunstan DJ, Kidd P, Fewster PF, Andrew NL, Grey R, David JPR, González L, González Y, Sacedón A & González-Sanz F (1994) . Applied Physics Letters, 65(7), 839-841.
MOWBRAY DJ, KOWALSKI OP, HOPKINSON M, SKOLNICK MS & DAVID JPR (1994) ELECTRONIC BAND-STRUCTURE OF ALGAINP GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 65(2), 213-215.
WOODHEAD J, REDDY M & DAVID JPR (1994) ELECTROLUMINESCENCE FROM INGAAS/INALAS HEMTS. ELECTRON LETT, 30(14), 1181-1183.
DAVID JPR, HOPKINSON M & PATE MA (1994) AVALANCHE BREAKDOWN IN (AL(X)GA(1X))0.52IN0.48P PIN JUNCTIONS. ELECTRON LETT, 30(11), 907-909.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, DELONG MC, HOPKINSON M, DAVID JPR & CULLIS AG (1994) SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS. J APPL PHYS, 75(4), 2029-2034.
David JPR, Hopkinson M, Ghin R & Pate MA (1994) Reverse breakdown characteristics in InGa(Al)P/InGaP p-i-n junctions. Conference Proceedings International Conference on Indium Phosphide and Related Materials, 403-406.
MOWBRAY DJ, KOWALSKI OP, SKOLNICK MS, HOPKINSON M & DAVID JPR (1994) OPTICAL SPECTROSCOPY OF ALGAINP BASED WIDE-BAND GAP QUANTUM-WELLS. SUPERLATTICE MICROST, 15(3), 313-316.
Hogg RA, Fisher TA, Willcox AR, Whittaker DM, Skolnick MS, Mowbray DJ, David JP, Pabla AS, Rees GJ, Grey R , Woodhead J et al (1993) . Phys Rev B Condens Matter, 48(11), 8491-8494.
PABLA AS, SANCHEZROJAS JL, WOODHEAD J, GREY R, DAVID JPR, REES GJ, HILL G, PATE MA, ROBSON PN, HOGG RA , FISHER TA et al (1993) TAILORING OF INTERNAL FIELDS IN INGAAS/GAAS MULTIWELL STRUCTURES GROWN ON (111)B GAAS. APPL PHYS LETT, 63(6), 752-754.
DELONG MC, MOWBRAY DJ, HOGG RA, SKOLNICK MS, HOPKINSON M, DAVID JPR, TAYLOR PC, KURTZ SR & OLSON JM (1993) PHOTOLUMINESCENCE, PHOTOLUMINESCENCE EXCITATION, AND RESONANT RAMAN-SPECTROSCOPY OF DISORDERED AND ORDERED GA0.52IN0.48P. J APPL PHYS, 73(10), 5163-5172.
David JPR, Hopkinson M, Hill G, Stavrinou P & Haywood SK (1993) Growth and characterisation of InAsP/InP SQW and MQW PIN diode structures. 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials, 167-170.
Roberts JS, Sale TE, Button CC, David JPR & Jennings A (1992) . Journal of Crystal Growth, 124(1-4), 792-800.
David JPR, Morley MJ, Wolstenholme AR, Grey R, Pate MA, Hill G, Rees GJ & Robson PN (1992) . Applied Physics Letters, 61(17), 2042-2044.
Gilpérez JM, Sánchez-Rojas JL, Muñoz E, Calleja E, David JPR, Hill G & Castagné J (1992) . Applied Physics Letters, 61(10), 1225-1227.
COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) DETERMINATION OF LOW-TEMPERATURE IMPACT IONIZATION COEFFICIENTS IN GAAS BY ELECTROLUMINESCENCE MEASUREMENTS ON SINGLE BARRIER TUNNELING STRUCTURES. APPL PHYS LETT, 61(7), 825-827.
HOPKINSON M, DAVID JPR, CLAXTON PA & KIGHTLEY P (1992) GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY. APPL PHYS LETT, 60(7), 841-843.
COCKBURN JW, SKOLNICK MS, DAVID JPR, GREY R, HILL G & PATE MA (1992) IMPACT IONIZATION AND ELECTROLUMINESCENCE IN SINGLE BARRIER TUNNELING STRUCTURES. SUPERLATTICE MICROST, 12(4), 443-446.
David JPR, Grey R, Pate MA, Claxton PA & Woodhead J (1991) . Journal of Electronic Materials, 20(4), 295-297.
ROBERTS JS, SINGH KC, BUTTON CC, DAVID JPR & WOODHEAD J (1991) ALGAAS/GAAS P-MODFET MATERIALS GROWN USING INTRINSIC CARBON DOPING. JOURNAL OF CRYSTAL GROWTH, 107(1-4), 915-920.
Woodhead J, Claxton PA, Grey R, Sale TE, David JPR, Liu L, Pate MA, Hill G & Robson PN (1990) . Electronics Letters, 26(25), 2117-2118.
DAVID JPR, WOLSTENHOLME AR, CLAXTON PA, GREY R & WOODHEAD J (1990) LOW LEAKAGE INGAAS/GAAS STRAINED LAYER MQWPIN STRUCTURES. J ELECTRON MATER, 19(7), 56-56.
Pickin W & David JPR (1990) . Applied Physics Letters, 56(3), 268-270.
Roberts JS, Button CC, David JPR, Jones AC & Rushworth SA (1990) . Journal of Crystal Growth, 104(4), 857-860.
Grey R, David JPR, Claxton PA, Gonzalez Sanz F & Woodhead J (1989) . Journal of Applied Physics, 66(2), 975-977.
PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. INST PHYS CONF SER(96), 397-400.
David JPR, Marsland JS & Roberts JS (1989) . IEEE Electron Device Letters, 10(7), 294-296.
Woodhead J, Gonzalez Sanz F, Claxton PA & David JPR (1988) . Semiconductor Science and Technology, 3(6), 601-604.
Pape IJ, Wa PLK, David JPR, Claxton PA & Robson PN (1988) . Electronics Letters, 24(19), 1217-1218.
Pape IJ, Li Kam Wa PLK, David JPR, Claxton PA, Robson PN & Sykes D (1988) . Electronics Letters, 24(15), 910-911.
ROBERTS DA, DAVID JPR, HILL G, HOUSTON PA, PATE MA, ROBERTS JS & ROBSON PN (1988) GAAS/ALGAAS MULTIPLE QUANTUM WELL PIN DIODES GROWN BY SELECTIVE AREA EPITAXY. ELECTRON LETT, 24(14), 896-898.
Li Kam Wa P, Robson PN, Roberts JS, Pate MA & David JPR (1988) . Applied Physics Letters, 52(24), 2013-2014.
ROBERTS JS, PATE MA, MISTRY P, DAVID JPR, FRANKS RB, WHITEHEAD M & PARRY G (1988) MOVPE GROWN MQW PIN DIODES FOR ELECTRO-OPTIC MODULATORS AND PHOTODIODES WITH ENHANCED ELECTRON IONIZATION COEFFICIENT. J CRYST GROWTH, 93(1-4), 877-884.
WHITEHEAD M, PARRY G, ROBERTS JS, MISTRY P, WA PLKM & DAVID JPR (1987) QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS. ELECTRON LETT, 23(20), 1048-1050.
CLAXTON PA, ROBERTS JS, DAVID JPR, SOTOMAYORTORRES CM, SKOLNICK MS, TAPSTER PR & NASH KJ (1987) GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE. J CRYST GROWTH, 81(1-4), 288-295.
Wa PLK, Robson PN, David JPR, Hill G, Mistry P, Pate MA & Roberts JS (1986) NONLINEAR PROPERTIES OF GaAs/GaAlAs MULTI-QUANTUM-WELL OPTICAL WAVEGUIDES.. IEE Colloquium Digest(1986 /128), 4-8.
WA PLK, ROBSON PN, DAVID JPR, HILL G, MISTRY P, PATE MA & ROBERTS JS (1986) ALL-OPTICAL SWITCHING EFFECTS IN A PASSIVE GAAS/GAALAS MULTIPLE-QUANTUM-WELL WAVE-GUIDE RESONATOR. ELECTRON LETT, 22(21), 1129-1130.
Roberts JS, Claxton PA, David JPR & Marsh JH (1986) . Electronics Letters, 22(10), 506-507.
David JPR, Marsland JS, Hall HY, Hill G, Mason NJ, Pate MA, Roberts JS, Robson PN, Sitch JE & Woods RC (1985) MEASURED IONIZATION COEFFICIENTS IN Ga//1// minus //xAl//xAs.. Institute of Physics Conference Series(74), 247-252.
DAVID JPR (1985) IONIZATION COEFFICIENT IN GAAS, DOPING DEPENDENCE. IEE PROC-I, 132(1), 47-47.
DAVID JPR, SITCH JE & STERN MS (1982) GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS. IEEE T ELECTRON DEV, 29(10), 1548-1552.
Harun F, Rusli JR, Richards RD, Abdul Rahman MG & David JPR () . Solid State Phenomena, 343, 99-104.

Book chapters

Gu Y, Richards RD, David JPR & Zhang Y (2019) , Springer Series in Materials Science (pp. 299-318). Springer Singapore
Drouot V, Beanland R, Button CC, Wang XY, David JPR, Ouali FF & Holden AJ (2018) , Microscopy of Semiconducting Materials 2003 (pp. 107-110).
Finley JJ & David JPR (2005) , Encyclopedia of Modern Optics (pp. 358-363). Elsevier
Allam J & David JPR (1996) , Hot Carriers in Semiconductors (pp. 343-346). Springer US
Cullis AG & Midgley PA () CRC Press

Conference proceedings

Yi X, Jin X, Liang BL, Lewis H, Tian Q, Tan CH, Xie S, Li Q, Yan Z, Buller G & David JPR (2025) . Optical Components and Materials XXII (pp 34-34), 25 January 2025 - 31 January 2025.
Millar RW, Mirza M, Smith CK, Kirdoda J, Dumas DCS, McCarthy C, Fleming F, Yi X, Modak M, Saalbach L , Muir D et al (2025) . Optical Components and Materials XXII (pp 19-19), 25 January 2025 - 31 January 2025.
Modak M, Yi X, Saalbach L, Mirza MMA, Jin X, Fleming F, Kirdoda J, Dumas DCS, Tian Q, Muir DAS , Smith CK et al (2025) . Silicon Photonics XX (pp 24-24), 25 January 2025 - 31 January 2025.
Modak M, Yi X, Saalbach L, Fleming F, Muir DAS, Mirza MMA, Kirdoda J, Dumas DCS, Smith C, McCarthy C , Mowbray H et al (2024) . Emerging Imaging and Sensing Technologies for Security and Defence IX (pp 17-17), 16 September 2024 - 20 September 2024.
Yi X, Saalbach L, Fleming F, Modak M, Muir D, Buller GS, Mirza MMA, Kirdoda J, Dumas DCS, Smith C , Coughlan C et al (2024) . Infrared Sensors, Devices, and Applications XIV (pp 12-12), 18 August 2024 - 23 August 2024.
Tan CH, Blain T, Cao Y, Taylor-Mew J, White B, Collins X, Ng JS & David J (2024) . Optical Sensing and Detection VIII, Vol. 12999. Strasbourg, France, 7 April 2024 - 7 April 2024.
Tan CH, Blain T, Taylor-Mew J, Cao Y, White B, Collins X, Ng JS & David J (2024) . Infrared Technology and Applications L (pp 19-19), 21 April 2024 - 26 April 2024.
Liu Y, Jin X, Lee S, Jung H, Lewis H, Guo B, Kodati S, Schawrtz M, Gerin C, Ronningen TJ , Campbell J et al (2024) . Optical Components and Materials XXI, Vol. 12882. San Francisco, California, United States, 27 January 2024 - 27 January 2024.
Harun F, Richards RD & David JPR (2023) . 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) (pp 40-43), 28 August 2023 - 30 August 2023.
David JPR, Jin X, Lewis HIJ, Guo B, Lee S, Jung H, Kodati SH, Liang BL, Krishna S & Campbell JC (2022) . Emerging Imaging and Sensing Technologies for Security and Defence VII (pp 10-10), 5 September 2022 - 8 September 2022.
Harun F, Richards RD & David JP (2022) . 2022 IEEE 8th International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA) (pp 127-131), 26 September 2022 - 28 September 2022.
Rockett TB, Adham NA, Carr M, David JPR & Richards RD (2022) . Biomedical Spectroscopy, Microscopy, and Imaging II (pp 42-42), 3 April 2022 - 23 May 2022.
Jin X, Guo B, Lewis H, Lee S, Liang B, Krishna S, Campbell J & David J (2022) . Optical Sensing and Detection VII (pp 7-7), 3 April 2022 - 16 May 2022.
Jin X, Xie S, Liang BL, Yi X, Lewis H, Lim LW, Liu Y, Ng BK, Huffaker D, Tan CH , Ong DS et al (2022) . Optical Components and Materials XIX (pp 19-19), 22 January 2022 - 28 February 2022.
Yi X, Xie S, Liang BL, Lim LW, Huffaker DL, Tan CH & David JPR (2020) . Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III (pp 18-18), 21 September 2020 - 25 September 2020.
Hasanah L, Julian C, Mulyanti B, Aransa A, Sumatri R, Johari MH, David JPR & Mohmad AR (2020) . 2020 IEEE 8th International Conference on Photonics (ICP) (pp 1-2), 12 May 2020 - 30 June 2020.
Yi X, Xie S, Liang BL, Lim LW, Debnath MC, Huffaker DL, Tan CH & David JPR (2020) . Optical Components and Materials XVII (pp 13-13), 1 February 2020 - 6 February 2020.
Mohmad AR & David JPK (2018) . 2018 IEEE International Conference on Semiconductor Electronics (ICSE) (pp 177-179), 15 August 2018 - 17 August 2018.
Singh R, Pergoloni S, O'Farrell T, Scarano G, David J & Biagi M (2018) White Light Constrained Multi-Primary Modulation for Visible Light Communication. 2017 IEEE Globecom Workshops (GC Wkshps). Marina Bay Sands Expo and Convention Centre, Singapore, 4 December 2017 - 4 December 2017.
Tan CH, Ng JS, Zhou X, David J, Zhang S & Krysa A (2017) . Proceedings, Advanced Photon Counting Techniques XI, Vol. 10212. California, United States, 9 April 2017 - 9 April 2017.
Becker JJ, Xu X, Woods-Robinson R, Campbell CM, Lassise M, Ager J & Zhang Y-H (2017) . 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) (pp 3410-3412), 25 June 2017 - 30 June 2017.
Ng JS, Zhou X, Auckloo A, White B, Zhang S, Krysa A, David JPR & Tan CH (2016) . Proceedings of SPIE, Vol. 9988. Edinburgh
Richards RD, Harun F, Cheong JS, Mellor A, Hylton NP, Wilson T, Thomas T, Ekins-Daukes NJ & David JPR (2016) . Proceedings of the 43rd Photovoltaic Specialists Conference (PVSC) 2016 (pp 1135-1137). Portland, OR, USA, 5 June 2016 - 5 June 2016.
Ker PJ, Marshall ARJ, Tan CH & David JPR (2016) . Photonics (ICP), 2016 IEEE 6th International Conference on. Sarawak, Malaysia, 14 March 2016 - 14 March 2016.
Richards RD, Hunter CJ, Bastiman F, Mohmad AR & David JPR (2016) . IET Optoelectronics, Vol. 10(2) (pp 34-38)
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) Al0.52In0.48P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015
Mohmad AR, Majlis BY, Bastiman F, Richards RD & David JPR (2015) . 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) (pp 1-3), 19 August 2015 - 21 August 2015.
Singh R, O'Farrell T & David JPR (2015) . 2015 IEEE 26th Annual International Symposium on Personal, Indoor, and Mobile Radio Communications (PIMRC) (pp 575-579), 30 August 2015 - 2 September 2015.
Cheong JS, Auckloo A, Ng JS, Krysa AB & David JPR (2015) . SPIE Proceedings, Vol. 9647 (pp 96470O-96470O)
Singh R, O'Farrell T & David JPR (2015) . 2015 IEEE 81st Vehicular Technology Conference (VTC Spring) (pp 1-5), 11 May 2015 - 14 May 2015.
Cheong JS, Qiao L, Baharuddin ANAP, Ng JS, Krysa AB & David JPR (2015) . Asia Communications and Photonics Conference 2015 (pp ASu5A.3-ASu5A.3), 2015.
Hossain MM, Zarkesh-Ha P, David JPR & Hayat MM (2014) . 2014 IEEE Photonics Conference (pp 170-171), 12 October 2014 - 16 October 2014.
Sandall IC, Bastiman F, White B, Richards R, David J & Chee Hing Tan (2014) . 2014 IEEE Photonics Conference (pp 356-357), 12 October 2014 - 16 October 2014.
Cheong JS, Ong JSL, Ng JS, Krysa AB & David JPR (2014) . 2014 IEEE Photonics Conference (pp 346-347), 12 October 2014 - 16 October 2014.
Sandall IC, Bastiman F, White B, Richards RD, David J & Tan CH (2014) . SPIE Proceedings
Mohmad AR, Majlis BY, Bastiman F, Hunter CJ, Richards RD, Ng JS & David JPR (2014) . 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014) (pp 354-357), 27 August 2014 - 29 August 2014.
Auckloo A, Tozer R, David J & Tan CH (2014) . 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS) (pp 590-593), 7 December 2014 - 10 December 2014.
Ker PJ, Tan CH & David JPR (2013) . 4th International Conference on Photonics Icp 2013 Conference Proceeding (pp 78-80)
Cheong JS, Ong JSL, Ng JS, Krysa AB, Bastiman F & David JPR (2013) . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Hobbs MJ, Bastiman F, Tan CH, David JPR, Krishna S & Plis E (2013) . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
Singh R, O'Farrell T & David J (2013) Performance evaluation of IEEE 802.15.7 CSK physical layer. Globecom Workshops (GC Wkshps), 2013 IEEE
Sandall IC, Ng JS, David JP, Tan CH, Wang T & Liu H (2012) . IEEE Photonics Conference 2012 (pp 167-168), 23 September 2012 - 27 September 2012.
Ker PJ, Marshall ARJ, Krysa AB, David JPR & Tan CH (2012) . Technical Digest 2012 17th Opto Electronics and Communications Conference Oecc 2012 (pp 220-221)
Tan SL, Soong WM, Steer MJ, Zhang S, Ng JS & David JPR (2012) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 8256
Ng JS, Vines P, Gomes RB, Babazadeh N, Lees JE, David JPR & Tan CH (2011) . IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) . IEEE Photonic Society 24th Annual Meeting Pho 2011 (pp 31-32)
Ker PJ, Marshall A, Gomes R, David JP, Ng JS & Tan CH (2011) . IEEE Photonic Society 24th Annual Meeting (pp 276-277), 9 October 2011 - 13 October 2011.
Gomes RB, Tan CH, Lees JE, David JPR & Ng JS (2011) . IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
Gomes RB, Ker PJ, Tan CH, David JPR & Ng JS (2011) . IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
Lees JE, Barnett AM, Bassford DJ, Ng JS, Tan CH, David JPR, Babazadeh N, Gomes RB, Vines P, McKeag RD & Boe D (2011) . IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
Hobbs MJ, Das SD, Tan CH, David JPR, Krishna S, Rodriguez JB & Plis E (2011) High detectivity MWIR type-II superlattice grown on a GaAs substrate. IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 31-32)
Goh YL, Tan SL, Zhang S, Ng JS & David JPR (2010) . 2010 Photonics Global Conference Pgc 2010
Tan CH, PVines , David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) . 2010 23rd Annual Meeting of the IEEE Photonics Society Photinics 2010 (pp 706-707)
Hayat MM, Ong DSG, David JPR & Ng JS (2010) . 2010 23rd Annual Meeting of the IEEE Photonics Society Photinics 2010 (pp 126-127)
Tan SL, Goh YL, Das SD, Zhang S, Tan CH, David JPR, Gautam N, Kim H, Plis E & Krishna S (2010) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7838
Ng JS, Tan SL, Goh YL, Tan CH, David JPR, Allam J, Sweeney SJ & Adams AR (2010) . Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 187-190)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2010) . Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 421-424)
Marshall ARJ, Vines P, Xie S, David JPR & Tan CH (2010) . Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 409-412)
Tan SL, Tan LJJ, Goh YL, Zhang S, Ng JS, David JPR, Marko IP, Allam J, Sweeney SJ & Adams AR (2010) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7726
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2010) . INFRARED TECHNOLOGY AND APPLICATIONS XXXVI, PTS 1 AND 2, Vol. 7660
Ng JS, Tan CH & David JPR (2010) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7681
Green JE, Loh WS, David JPR, Tozer RC, Soloviev SI & Sandvik PM (2010) . SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, Vol. 645-648 (pp 1081-1084)
Tan LJJ, Soong WS, Tan SL, Goh YL, Steer MJ, Ng JS, David JPR, Marko IP, Chamings J, Allam J , Sweeney SJ et al (2009) Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234)
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE, Krishna S, Jang WY & Hayat MM (2009) Low Strain Multiple Stack Quantum Dot Infrared Photodetectors for Multispectral and High Resolution Hyperspectral Imaging. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 166-167)
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
Chee HT, Marshall A, Steer MJ & David JPR (2009) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7355
Goh YL, Ong DSG, Zhang S, Ng JS, Tan CH & David JPR (2009) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7298
Marshall ARJ, Tan CH & David JPR (2009) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7298
Ng JS, Tan CH & David JPR (2009) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7320
Loh WS, David JPR, Ng BK, Soloviev SI, Sandvik PM, Ng JS & Johnson CM (2009) Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314)
Tan CH, Marshall A, Steer MJ & David JPR (2009) The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths. PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM INFORMATION TRANSFER AND PROCESSING II, Vol. 7355
David JPR, Ng JS, Tan CH & Goh YL (2009) Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
Tan CH, Ng JS, Xie S & David JPR (2009) Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
Loh WS, David JPR, Soloviev SI, Cha HY, Sandvik PM, Ng JS & Johnson CM (2009) Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210)
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . Conference Proceedings Lasers and Electro Optics Society Annual Meeting LEOS (pp 296-297)
Ong DSG, Ng JS, David JPR, Hayat MM & Sun P (2008) OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322)
Mun SCLT, Tan CH, Marshall ARJ, Goh YL, Tan LJJ & David JPR (2008) DESIGN CONSIDERATIONS FOR IN(0.52)AL(0.48)AS BASED AVALANCHE PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 331-333)
Soong WM, Ng JS, Steer MJ, Hopkinson M, David JPR, Chamings J, Sweeney SJ, Adams AR & Allam J (2008) DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348)
David JPR (2008) . 2008 IEEE International Conference on Semiconductor Electronics (pp A12-A12), 25 November 2008 - 27 November 2008.
Das SD, Goh YL, Tan CH, David JPR, Rodriguez JB, Plis EA, Sharma YD, Kim HS & Krishna S (2008) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Marshall ARJ, Tan CH, Steer MJ & David JPR (2008) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Vines P, Tan CH, David JPR, Attaluri RS, Vandervelde TE & Krishna S (2008) . Proceedings of SPIE the International Society for Optical Engineering, Vol. 7113
Hasbullah NF, Ng JS, Liu HY, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ, Sanchez AM & Beanland R (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
Tan LJJ, Ng JS, Tan CH & David JPR (2007) Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
Ng JS, Tan LJJ, Ong ASG, Tan CH & David JPR (2007) Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
Marshall ARJ, Tan CH, David JPR, Ng JS & Hopkinson M (2007) Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
Tan CH, Mun SCLT, Vines P, David JPR & Hopkinson M (2007) The effects of monolayer thickness and sheet doping density on dark current and noise current in Quantum Dot Infrared Photodetectors - art. no. 67400J. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp J7400-J7400)
Tan CH, Goh YL, Marshall ARJ, Tan LJJ, Ng JS & David JPR (2007) Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
Ong DSG, Ng JS, Tan LJJ, Tan CH & David JPR (2007) Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
Goh YL, Ng JS, Tan CH, David JPR, Sidhu R, Holmes AL & Campbell JC (2007) InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
Ng JS, Soong WM, Steer MJ, Hopkinson M, David JPR, ChamingS J, Adams AR, Sweeney SJ & Aiiam J (2007) Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349)
Loh WS, Johnson CM, Ng JS, Sandvik PM, Arthur SD, Soloviev SI & David JPR (2007) Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342)
Aivaliotis P, Zibik E, Wilson LR, David JPR, Hopkinson M & Groves C (2006) . Electro-Optical and Infrared Systems: Technology and Applications III, Vol. 6395 (pp U102-U110)
Ng JS, Tan CH & David JPR (2006) . IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics Infobase Conference Papers
Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Hopkinson M & David JPR (2006) Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
Marshall ARJ, Goh YL, Tan LJJ, Tan CH, Ng JS & David JPR (2006) A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
Goh YL, Tan CH, Ng JS, Ng WK & David JPR (2005) Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
David JPR (2005) Low noise avalanche photodiodes. 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS) (pp 368-369)
Liu HY, Sellers IR, Gutierrez M, Groom KM, Beanland R, Soong WM, Hopkinson M, David JPR, Badcock TJ, Mowbray DJ & Skolnick MS (2005) . MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Vol. 25(5-8) (pp 779-783)
Ng JS, Tan CH & David JPR (2004) . JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
Ng BK, David JPR, Soong WM, Ng JS, Tan CH, Liu HY, Hopkinson M & Robson PN (2004) . Device Research Conference Conference Digest Drc (pp 79-80)
Navaretti P, Liu H, Hopkinson M, Gutierrez M, David JPR, Hill G, Herrera M, Gonzalez D & Garcia R (2004) . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 301-304)
Sun HD, Clark AH, Calvez S, Dawson MD, Liu HY, Hopkinson M, Navaretti P, Gutierrez M, Ng JS, David JPR , Gilet P et al (2004) . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH & Weiner M (2004) Avalanche multiplication and breakdown in 4H-SiC diodes. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, Vol. 457-460 (pp 1069-1072)
Rees G & David J (2003) Lonisation dead space and the super-APD. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 995-996)
Ng JS, Tan CH, David JAR & Rees GJ (2003) Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
Harrison CN, David JPR, Groves C, Hopkinson M & Rees GJ (2003) Effect of temperature on the avalanche properties of sub-micron structures. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 263-266)
Ng BK, David JPR, Tozer RC, Rees GJ, Yan F, Qin C & Zhao JH (2003) High gain, low noise 4H-SiC UV avalanche photodiodes. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 355-358)
Ng JS, Yee MC, David JPR, Houston PA, Rees GJ & Hill G (2003) In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270)
David JPR (2003) Physics & design of low noise avalanche photodiodes. CAOL '2003: PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, VOL 1 (pp 99-99)
David JPR (2003) Physics and design of low noise avalanche photodiodes - LEOS distinguished lecture 2003-2004. ICTON 2003: 5TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS (pp 170-170)
David J (2003) Low Noise Avalanche Photodiodes. Optics Infobase Conference Papers (pp 19-20)
Groves C, Ghin R, Harrison CN, David JPR & Rees GJ (2002) Temperature dependence of avalanche multiplication in GaAs. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 226-230)
Yee M, Ng WK, David JPR & Houston PA (2002) Temperature dependence of In0.53Ga0.47As ionisation coefficients. EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 316-320)
Ng JS, David JPR, Rees GJ, Pinches SM & Hill G (2001) . IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228)
Ng BK, Ng JS, Hambleton PJ, David JPR, Ong DS, Rees GJ & Tozer RC (2001) Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9)
Plimmer SA, Hambleton PJ, Ng BK, Dunn GM, Ng JS, David JPR & Rees GJ (2001) How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518)
Ng BK, David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Hopkinson M (2001) Avalanche multiplication noise in bulk and thin AlxGa1-xAs (x=0-0.8) PIN and NIP diodes. PHOTODETECTORS: MATERIALS AND DEVICES VI, Vol. 4288 (pp 39-46)
Fry PW, Mowbray DJ, Itskevich IE, Skolnick MS, Barker JA, O'Reilly EP, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG & Hill G (2001) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 224(2) (pp 497-502)
Toriz-Garcia JJ, Parbrook PJ, Wood DA & David JPR (2001) GaN Schottky ultraviolet photodetectors using the metal-semiconductor-metal structure. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 131-136)
Fry PW, Itskevich IE, Mowbray DJ, Sholnick MS, Barker JA, O'Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M , Al-Khafaji M et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: Observation of a permanent dipole moment. SEMICONDUCTOR QUANTUM DOTS, Vol. 571 (pp 147-152)
Tan CH, David JPR, Rees GJ, Tozer RC & Li KF (2000) Low avalanche excess noise in thin AlxGa1-xAs (x=0.15 and 0.60) avalanche photodiodes. 2000 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 34-38)
Ng BK, David JPR, Tozer RC, Rees GJ, Tan CH, Plimmer SA & Hopkinson M (2000) Low avalanche noise behaviour in bulk Al0.8Ga0.2As. 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 519-523)
David JPR, Tan CH, Plimmer SA, Rees GJ, Tozer RC & Robson PN (2000) Design of low-noise avalanche photodiodes. OPTOELECTRONIC INTEGRATED CIRCUITS IV, Vol. 3950 (pp 30-38)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. SILICON-BASED OPTOELECTRONICS II, Vol. 3953 (pp 95-102)
Tan CH, David JPR, Clark J, Rees GJ, Plimmer SA, Robbins DJ, Herbert DC, Carline RT & Leong WY (2000) Avalanche multiplication and noise in sub-micron Si p-i-n diodes. Proceedings of SPIE the International Society for Optical Engineering, Vol. 3953 (pp 95-102)
Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Barker JA, O'Reilly EP, Wilson LR, Maksym PA, Hopkinson M, Al-Khafaji M , David JPR et al (2000) Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment. PHYSICA E, Vol. 7(3-4) (pp 408-412)
Tan CH, Plimmer SA, David JPR, Rees GJ, Tozer RC, Clark J & Grey R (1999) Electric field gradient dependence of excess avalanche noise. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO (pp 230-235)
Chia CK, David JPR, Rees GJ, Plimmer SA & Grey R (1999) . SPIE Proceedings, Vol. 3896 (pp 385-385)
Tan CH, Li KF, Plimmer SA, David JPR, Rees GJ, Clark J & Button CC (1999) Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions. Conference Proceedings International Conference on Indium Phosphide and Related Materials (pp 295-298)
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) Low noise avalanche photodetectors. Conference on Lasers and Electro Optics Europe Technical Digest (pp 383)
Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 435-438)
Khoo EA, Woodhead J, David JPR, Pabla AS, Grey R & Rees GJ (1998) . Conference on Lasers and Electro-Optics-Europe (pp CTuI50-CTuI50), 1998.
Li KF, Ong DS, David JPR, Tozer RC, Rees GJ, Button CC & Robson PN (1998) . Conference on Lasers and Electro-Optics-Europe (pp CFG9-CFG9), 1998.
Ong DS, Li KF, Rees GJ, Dunn GM, David JPR & Robson PN (1998) Monte Carlo estimation of excess noise factor in thin p(+)-i-n(+) avalanche photodiodes. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 631-634)
Chia CK, David JPR, Rees GJ, Plimmer SA, Hopkinson M, Grey R & Robson PN (1998) Avalanche multiplication in sub-micron AlxGa1-xAs/GaAs heterostructures. 1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (pp 391-394)
Flitcroft RM, Lye BC, Yow HK, Houston PA, Button CC & David JPR (1998) Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage. COMPOUND SEMICONDUCTORS 1997, Vol. 156 (pp 435-438)
Flitcroft RM, Houston PA, Lye BC, Button CC & David JPR (1997) Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors. EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (pp 273-278)
Mowbray DJ, Kowalski OP, Cockburn JW, Skolnick MS, Hopkinson M & David JPR (1997) Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, Vol. 3001 (pp 135-146)
Sale TE, Roberts JS, David JPR, Grey R & Robson PN (1997) . SPIE Proceedings, Vol. 3004 (pp 10-21)
Sale TE, Roberts JS, David JPR, Grey R, Woodhead J & Robson PN (1997) . SPIE Proceedings, Vol. 3003 (pp 100-110)
Ghin R, Dunn GM, Plimmer SA, David JPR, Rees GJ & Herbert DC (1997) Monte Carlo modelling of impact ionisation in GaAs. COMPOUND SEMICONDUCTORS 1996(155) (pp 629-632)
Dunn GM, Rees GJ & David JPR (1997) Monte Carlo simulation of impact ionization effects in MSM photodetectors and MESFET's.. COMPOUND SEMICONDUCTORS 1996(155) (pp 659-662)
Martin RW, McGow F, Hopkinson M & David JPR (1997) All-optical modulation near 1.55 mu m using In1-x-yGaxAlyAs coupled quantum wells. COMPOUND SEMICONDUCTORS 1996(155) (pp 539-542)
Ghin R, David JPR, Hopkinson M, Pate MA, Rees GJ, Robson PN, Herbert DC, Higgs AW & Wight DR (1997) Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P. COMPOUND SEMICONDUCTORS 1996(155) (pp 585-588)
Hopkinson M & David JPR (1997) Incorporation of As-2 in InAsxP1-x and its application to InAsxP1-x/InP quantum well structures. JOURNAL OF CRYSTAL GROWTH, Vol. 175 (pp 1033-1038)
Li KF, Ong DS, David JPR, Robson PN, Tozer RC, Rees GJ & Grey R (1997) Avalanche photodiode (APD) noise dependence on avalanche region width. 55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997 (pp 170-171)
David JPR, Ghin R, Hopkinson M, Pate MA & Robson PN (1996) Impact ionisation coefficients in (AlxGa1-x)(0.52)In0.48P. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 569-574)
David JPR, Ghin R, Plimmer SA, Hopkinson M & Allan J (1996) Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes. ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS (pp 256-260)
Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1996) Electron and hole multiplication characteristics in short GaAs PINs. COMPOUND SEMICONDUCTORS 1995, Vol. 145 (pp 563-568)
Plimmer SA, David JPR, Herbert DC, Rees GJ, Houston PA, Robson PN, Grey R, Pate MA, Higgs AW & Wight DR (1996) Multiplication characteristics of thin AlxGa1-xAs (x=0 to 0.3) diodes. 1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST (pp 44-45)
Plimmer SA, David JPR, Lee TW, Rees GJ, Houston PA, Robson PN, Grey R, Herbert DC, Higgs AW & Wight DR (1995) Non-local effects on the multiplication characteristics of thin GaAs p-i-n and n-i-p diodes. 1995 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS (EDMO) (pp 64-69)
Martin RW, McGow F, Hopkinson M & David JPR (1995) Exciton effects in strain-balanced GaInAs/AlInAs and GaInAs/GaInAs coupled quantum wells.. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, Vol. 17(11-12) (pp 1607-1612)
David JPR, Sale TE, Pabla AS, RodriquezGirones PJ, Woodhead J, Grey R, Rees GJ, Robson PN & Skolnick MS (1995) Photoluminescence of piezoelectric strained InGaAs-GaAs multi-quantum well p-i-n structures. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 42-46)
Chen YH, Woodhead J, David JPR, Button CC, Hopkinson M, Roberts JS, Sale TE & Robson PN (1995) Visible vertical cavity surface emitting lasers at lambda<650 nm. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 35(1-3) (pp 12-16)
HOPKINSON M, DAVID JPR, KHOO EA, PABLA AS, WOODHEAD J & REES GJ (1995) InxGa1-xAs/InP multiquantum well structures grown on [111]B InP substrates. SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp 299-302)
Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) . Integrated Photonics Research (pp FF5-FF5), 1994.
DAVID JPR, KIGHTLEY P, CHEN YH, GOH TS, GREY R, HILL G & ROBSON PN (1994) LEAKAGE CURRENT MECHANISMS IN STRAINED INGAAS/GAAS MQW STRUCTURES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 373-378)
DAVID JPR, ALLAM J, ROBERTS JS, GREY R, REES G & ROBSON PN (1994) AVALANCHE BREAKDOWN IN GAAS/ALXGA1-XAS MULTILAYERS AND ALLOYS. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 721-726)
SANCHEZROJAS JL, MUNOZ E, PABLA AS, DAVID JPR, REES GJ, WOODHEAD J & ROBSON PN (1994) OPTOELECTRONIC EFFECTS AND FIELD DISTRIBUTION IN STRAINED (111)B INGAAS/ALGAAS MQW PIN DIODES. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, Vol. 136(136) (pp 331-336)
DAVID JPR, HOPKINSON M, GHIN R & PATE MA (1994) REVERSE BREAKDOWN CHARACTERISTICS IN INGA(AL)P INGAP P-I-N JUNCTIONS. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 403-406)
HOPKINSON M, DAVID JPR, KOWALSKI OP, MOWBRAY DJ & SKOLNICK MS (1994) GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINP/ALGAINP QUANTUM-WELLS BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY. SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS (pp 551-554)
FISHER TA, HOGG RA, WILLCOX ARK, WHITTAKER DM, SKOLNICK MS, MOWBRAY DJ, DAVID JPR, PABLA AS, REES GJ, GREY R , SANCHEZROJAS JL et al (1994) SPECTROSCOPIC STUDY OF PIEZOELECTRIC FIELD EFFECTS IN INGAAS/GAAS MULTIQUANTUM WELLS GROWN ON (111)B ORIENTED GAAS SUBSTRATES. SOLID-STATE ELECTRONICS, Vol. 37(4-6) (pp 645-648)
Pabla AS, Woodhead J, Grey R, David JPR, Rees GJ, Pate MA & Robson PN (1994) Demonstration of All-Optical Bistability in a Strained Piezoelectric Self Electro-optic Effect Device. Optics Infobase Conference Papers (pp 260-262)
AARDVARK A, ALLOGHO GG, BOUGNOT G, DAVID JPR, GIANI A, HAYWOOD SK, HILL G, KLIPSTEIN PC, MANSOOR F, MASON NJ , NICHOLAS RJ et al (1993) DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol. 8(1) (pp S380-S385)
CLAXTON PA, HOPKINSON M, KOVAC J, HILL G, PATE MA & DAVID JPR (1991) QUANTUM-CONFINED STARK-EFFECT IN INGAAS/INP MULTIPLE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY. JOURNAL OF CRYSTAL GROWTH, Vol. 111(1-4) (pp 1080-1083)
PAPE IJ, WA PLK, ROBERTS DA, DAVID JPR, CLAXTON PA & ROBSON PN (1989) DISORDERING OF IN0.53GA0.47AS/INP MULTIPLE QUANTUM-WELLS BY SULFUR OR ZINC DIFFUSION AND PROTON-BOMBARDMENT. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 (pp 397-400)
Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z & David JPR () . Journal of Crystal Growth. Montpellier, France
Loh WS, Johnson CM, Ng JS, Sandvik P, Arthur S, Soloviev S & David JPR () (pp 339-342)
David JPR () . Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715), Vol. 1 (pp 99-99)
David JPR, Ghin R, Plimmer SA, Rees GJ & Grey R () . HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) (pp 187-190)
Farley RJ, Haywood SK, Hewer VA, Hogg JHC, Stavrinou PN, Hopkinson M, David JPR & Pate M () . Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) (pp 564-567)
Guy P, Farley RJ, Haywood SK, Hewer VA, Hogg JHC, David JPR, Hopkinson M & Pate M () . Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials (pp 440-443)
Stavrinou PN, Haywood SK, Hart L, Hopkinson M, David JPR & Hill G () . Seventh International Conference on Indium Phosphide and Related Materials (pp 536-539)
Stavrinou P, Haywood SK, Hart L, Zhang X, Hopkinson M, David JPR & Hill G () . 1993 (5th) International Conference on Indium Phosphide and Related Materials (pp 652-655)
Stavrinou P, Haywood SK, Zhang X, Hopkinson M, Claxton PA, David JPR & Hill G () . LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels (pp 569-572)
Hopkinson M, Claxton PA, David JPR, Hill G, Reddy M & Pate MA () . [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials (pp 492-495)

Preprints

Jung H, Lee S, Jin X, Liu Y, Ronningen TJ, Grein CH, David JPR & Krishna S (2024) , arXiv.
Gamel M, Ker PJ, Lee HJ, Rashid WESWA, Hannan MA, David J & Jamaludin MZ (2020) , Research Square Platform LLC.
Singh R, O'Farrell T, Bui TC, Biagi M & David JPR (2019) , arXiv.
Warburton RE, Pellegrini S, Tan L, Ng JS, Krysa A, Groom K, David JPR, Cova S & Buller GS (2006) , arXiv.
Pellegrini S, Warburton RE, Tan LJJ, Ng JS, Krysa AB, Groom K, David JPR, Cova S, Robertson MJ & Buller GS (2006) , arXiv.

Research group: Materials and Devices

Teaching interests

EEE124 -Introduction to Energy
EEE225 - Analogue and Digital Electronics
EEE6216 -Energy Efficient Semiconductor Devices
MEC316 - Renewable Energy

Professional activities and memberships

Fellow of the IEEE
Fellow of the IET

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School of Electrical and Electronic Engineering

School of Electrical and Electronic Engineering

Professor John David

Journal articles

Book chapters

Conference proceedings

Preprints

Links

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